电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

U1898_D27Z

产品描述JFET N 通道 40 V 625 mW 通孔 TO-92-3
产品类别分立半导体    晶体管   
文件大小27KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

U1898_D27Z在线购买

供应商 器件名称 价格 最低购买 库存  
U1898_D27Z - - 点击查看 点击购买

U1898_D27Z概述

JFET N 通道 40 V 625 mW 通孔 TO-92-3

U1898_D27Z规格参数

参数名称属性值
类别
厂商名称ON Semiconductor(安森美)
包装卷带(TR)
FET 类型N 通道
不同 Vds 时输入电容 (Ciss)(最大值)16pF @ 20V
工作温度-55°C ~ 150°C(TJ)
安装类型通孔
封装/外壳TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装TO-92-3
电压 - 击穿 (V(BR)GSS)40 V
电阻 - RDS(On)50 Ohms
功率 - 最大值625 mW
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss)15 mA @ 20 V
不同 Id 时电压 - 截止 (VGS off)2 V @ 1 nA
基本产品编号U1898

文档预览

下载PDF文档
U1898
U1898
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabalized amplifiers.
• Sourced from Process 51.
• See J111 for characteristics.
TO-92
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
40
-40
50
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GS
V
GS(off)
I
DGO
I
DSS
r
DS(on)
Small Signal Characteristics
r
ds(on)
C
iss
C
rss
t
on
t
off
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
DS
= VGS = 0, f= 1.0 kHz
V
DS
= 20, V
GS
= 0, f = 1.0 MHz
V
GS
= - 20 V, f = 1.0 MHz
I
D(on)
= 6.0 mA
V
GS(off)
= 6.0 V
50
16
5.0
35
60
pF
pF
ns
ns
Parameter
Test Condition
I
G
= 1.0
µA,
V
DS
= 0
V
DS
= 20 V, I
D
= 1.0 nA
V
DG
= 20 V, I
S
= 0
V
DS
= 20 V, V
GS
= 0
I
D
= 1.0 mA, V
GS
= 0
15
50
Min.
-40
-2.0
-7.0
-200
Max.
Units
V
V
pA
mA
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current *
On Characteristics
Switching Characteristics
* Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 76  561  141  2563  768  2  12  3  52  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved