FPN560 / FPN560A
FPN560
FPN560A
C
TO-226
B
E
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
60
80
5.0
3.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPN560 / FPN560A
1.0
50
125
Units
W
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0 V, I
C
= 0
60
80
5.0
100
10
100
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 1.0 A, V
CE
= 2.0 V
560
560A
70
100
250
80
40
300
550
V
CE(
sat
)
Collector-Emitter Saturation Voltage
560
560A
V
BE(
sat
)
V
BE(
on
)
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
300
350
300
1.25
1.0
mV
mV
mV
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance
Transition Frequency
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
75
30
pF
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
V
BESAT
-BASE-EMITTER SATURATION VOLTAGE(V)
1.4
1.2
1
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
Base-Emitter On Voltage vs.
Collector Current
1.4
V
ce
= 2.0V
1.2
1
- 40 °C
- 40 °C
0.8
0.6
0.4
0.2
0.001
25 °C
0.8
0.6
0.4
0.2
0.0001
25 °C
125 °C
125 °C
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
Input/Output Capacitance vs.
Reverse Bias Voltage
450
400
CAPACITANCE (pf)
350
300
250
200
150
100
50
C
obo
C
ibo
f = 1.0 MHz
0.6
125°C
25°C
0.4
- 40°C
0.2
0
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0
0.1
0.2
0.5 1
2
5
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
Current Gain vs. Collector Current
500
125°C
V
ce
= 2.0V
Power Dissipation vs
Ambient Temperature
P
D
- POWE R DIS SIPATION (W)
1
H
FE
- CURRENT GAIN
400
TO-226
0.75
300
25°C
200
0.5
- 40°C
100
0.25
0
0.0001
0.001
0.01
0.1
1 2
I
C
- COLLECTOR CURRENT (A)
5
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
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effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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