Photomicrosensor (Transmissive)
EE-SJ5-B
Be sure to read
Precautions
on page 25.
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
15.4
■
Features
•
General-purpose model with a 5-mm-wide slot.
•
PCB mounting type.
•
High resolution with a 0.5-mm-wide aperture.
■
Absolute Maximum Ratings (Ta = 25°C)
5±0.2
2.1
×
0.5 Aperture holes (see note)
Item
Emitter
Forward current
Pulse forward cur-
rent
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Ambient tem-
perature
Operating
Storage
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA
(see note 1)
1A
(see note 2)
4V
30 V
---
20 mA
100 mW
(see note 1)
–25°C to 85°C
–30°C to 100°C
260°C
(see note 3)
Optical axis
7.2±0.2
Four, 0.25
9.2±0.3
2.54±0.2
Four, 0.5
Cross section AA
Note:
There is no difference in size
between the slot on the emitter
and that on the detector.
Internal Circuit
K
C
Unless otherwise specified, the
tolerances are as shown below.
A
E
Soldering temperature
Dimensions
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
μs
maximum with a frequency of
100 Hz.
3.
Complete soldering within 10 seconds.
■
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Rising time
Falling time
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
Value
1.2 V typ., 1.5 V max.
0.01
μA
typ., 10
μA
max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4
μs
typ.
4
μs
typ.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0
lx
---
I
F
= 20 mA, I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 5 mA
Condition
112
EE-SJ5-B
Photomicrosensor (Transmissive)
■
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Collector dissipation P
C
(mW)
Forward current I
F
(mA)
I
F
P
C
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current I
F
(mA)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
CE
= 10 V
Ta =
−30°C
Ta = 25°C
Ta = 70°C
Light current I
L
(mA)
Ambient temperature Ta (°C)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 5 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Dark current I
D
(nA)
V
CE
= 10 V
0
lx
Light current I
L
(mA)
I
F
= 50 mA
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Collector−Emitter voltage V
CE
(V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resist-
ance Characteristics (Typical)
V
CC
= 5 V
Ta = 25°C
Sensing Position Characteristics
(Typical)
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
120
Response time tr, tf (μs)
Relative light current I
L
(%)
100
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
(Center of optical axis)
1.0
1.5
2.0
80
60
d
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
Load resistance R
L
(kΩ)
Distance d (mm)
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SJ5-B
Photomicrosensor (Transmissive)
113
模拟电子
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