2N5246
2N5246
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
• Sourced from process 90.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
30
-30
10
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
gfs
goss
Parameter
Test Condition
I
G
= 1.0µA, V
DS
= 0
V
GS
= 25V, V
DS
= 0
V
DS
= 15V, I
D
= 1.0nA
V
DS
= 15V, V
GS
= 0
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
-0.5
1.5
3000
Min.
-30
-1.0
-4.0
7.0
9500
50
Max.
Units
V
nA
V
mA
µmhos
µmhos
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse
≤
300µs
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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©2003 Fairchild Semiconductor Corporation
Rev. I5
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