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BC212B_J35Z

产品描述晶体管 - 双极 (BJT) - 单 PNP 50 V 100 mA - 350 mW 通孔 TO-92-3
产品类别分立半导体    晶体管   
文件大小44KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

BC212B_J35Z概述

晶体管 - 双极 (BJT) - 单 PNP 50 V 100 mA - 350 mW 通孔 TO-92-3

BC212B_J35Z规格参数

参数名称属性值
类别
厂商名称ON Semiconductor(安森美)
包装散装
晶体管类型PNP
不同 Ib、Ic 时 Vce 饱和压降(最大值)600mV @ 5mA,100mA
电流 - 集电极截止(最大值)15nA(ICBO)
不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值)60 @ 2mA,5V
工作温度-55°C ~ 150°C(TJ)
安装类型通孔
封装/外壳TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装TO-92-3
电流 - 集电极 (Ic)(最大值)100 mA
电压 - 集射极击穿(最大值)50 V
功率 - 最大值350 mW
基本产品编号BC212

文档预览

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BC212B
BC212B
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings*
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
50
60
5
100
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
I
C
= 2mA
I
C
= 10µA
I
E
= 10µA
V
CB
= 30V
V
EB
= 4V
V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
V
CE
= 5V, I
C
= 2mA, f = 1KHz
V
CE
= 5V, I
C
= 200µA, f = 1KHz
R
G
= 2KΩ, BW = 200Hz
200
0.6
40
60
0.6
1.4
0.72
6
400
10
dB
V
V
V
pF
Test Condition
Min.
50
60
5
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics*
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
fe
NF
Small Signal Current Gain
Noise Figure
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A, October 2002

 
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