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MT48LC4M16A2P-6 IT:G

产品描述SDRAM 存储器 IC 64Mb(4M x 16) 并联 167 MHz 5.5 ns 54-TSOP II
产品类别半导体    存储器   
文件大小4MB,共85页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT48LC4M16A2P-6 IT:G概述

SDRAM 存储器 IC 64Mb(4M x 16) 并联 167 MHz 5.5 ns 54-TSOP II

MT48LC4M16A2P-6 IT:G规格参数

参数名称属性值
类别
厂商名称Micron Technology
包装托盘
存储器类型易失
存储器格式DRAM
技术SDRAM
存储容量64Mb(4M x 16)
存储器接口并联
写周期时间 - 字,页12ns
电压 - 供电3V ~ 3.6V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳54-TSOP(0.400",10.16mm 宽)
供应商器件封装54-TSOP II
时钟频率167 MHz
访问时间5.5 ns
基本产品编号MT48LC4M16A2

文档预览

下载PDF文档
128Mb: x4, x8, x16 SDRAM
Features
SDR SDRAM
MT48LC32M4A2 – 8 Meg x 4 x 4 Banks
MT48LC16M8A2 – 4 Meg x 8 x 4 Banks
MT48LC8M16A2 – 2 Meg x 16 x 4 Banks
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths (BL): 1, 2, 4, 8, or full
page
• Auto precharge, includes concurrent auto precharge
and auto refresh modes
• Self refresh modes: Standard and low power
(not available on AT devices)
• Auto Refresh
– 64ms, 4096-cycle refresh (commercial and
industrial)
– 16ms, 4096-cycle refresh (automotive)
• LVTTL-compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• Plastic package – OCPL
2
– 54-pin TSOP II (400 mil)
– 54-pin TSOP II (400 mil) Pb-free
– 60-ball TFBGA (8mm x 16mm)
– 60-ball TFBGA (8mm x 16mm) Pb-
free
– 54-ball VFBGA (x16 only) (8mm x
8mm)
– 54-ball VFBGA (x16 only) (8mm x
8mm) Pb-free
• Timing – cycle time
– 7.5ns @ CL = 3 (PC133)
– 7.5ns @ CL = 2 (PC133)
– 6.0ns @ CL = 3 (x16 only)
• Self refresh
– Standard
– Low power
• Revision
• Operating temperature range
– Commercial (0˚C to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
Notes:
1. Contact Micron for availability.
2. Off-center parting line.
3. Only available on Revision G.
Options
Marking
TG
P
FB
1
BB
1
F4
B4
-75
3
-7E
-6A
None
L
3
:G/:L
None
IT
AT
1
Options
• Configurations
– 32 Meg x 4 (8 Meg x 4 x 4 banks)
1
– 16 Meg x 8 (4 Meg x 8 x 4 banks)
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = 2 CLK
Table 1: Key Timing Parameters
CL = CAS (READ) latency
Speed Grade
-6A
-75
-7E
Clock
Frequency (MHz)
167
133
133
Marking
32M4
16M8
8M16
A2
Target
t
RCD-
t
RP-CL
3-3-3
3-3-3
2-2-2
t
RCD
(ns)
t
RP
(ns)
CL (ns)
18
20
15
18
20
15
18
20
15
PDF: 09005aef8091e66d
128mb_x4x8x16_sdram.pdf - Rev. V 09/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.

 
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