128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Features
Mobile Low-Power SDR SDRAM
MT48H8M16LF – 2 Meg x 16 x 4 banks
MT48H4M32LF – 1 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.7–1.95V
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• 4 internal banks for concurrent operation
• Programmable burst lengths (BL): 1, 2, 4, 8, and con-
tinuous
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control self refresh
rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive strength (DS)
• 64ms refresh period
Options
• V
DD
/V
DDQ
: 1.8V/1.8V
• Addressing
– Standard addressing option
• Configuration
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
– 4 Meg x 32 (1 Meg x 32 x 4 banks)
• Plastic “green” packages
– 54-ball VFBGA (8mm x 8mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
• Timing: cycle time
– 6ns at CL = 3
– 7.5ns at CL = 3
• Operating temperature range
– Commercial (0˚C to +70˚C)
– Industrial (–40˚C to +85˚C)
• Revision
Notes:
Marking
H
LF
8M16
4M32
B4
B5
-6
-75
None
IT
:K
1. Available only for x16 configuration.
2. Available only for x32 configuration.
Table 1: Configuration Addressing
Architecture
Number of banks
Bank address balls
Row address balls
Column address balls
8 Meg x 16
4
BA0, BA1
A[11:0]
A[8:0]
4 Meg x 32
4
BA0, BA1
A[11:0]
A[7:0]
Table 2: Key Timing Parameters
Speed
Grade
-6
-75
Note:
Clock Rate (MHz)
CL = 2
104
104
CL = 3
166
133
Access Time
CL = 2
8ns
8ns
CL = 3
5ns
5.4ns
1. CL = CAS (READ) latency
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Features
Figure 1: 128Mb Mobile LPSDR Part Numbering
MT
Micron Technology
Product Family
48 = Mobile SDR SDRAM
48
H
8M16 LF
B4
-6
IT
:K
Revision
:K
Operating Temperature
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Operating Voltage
H = 1.8V/1.8V
Cycle Time
Configuration
8 Meg x 16
4 Meg x 32
-6 = 6ns,
t
CK CL = 3
-75 = 7.5ns,
t
CK CL = 3
Package Codes
Addressing
LF = Mobile standard addressing
B4 = 8mm x 8mm VFBGA “green”
B5 = 8mm x 13mm VFBGA “green”
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. Micron’s FBGA part marking decoder is available at
www.micron.com/decoder.
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Features
Contents
General Description ......................................................................................................................................... 8
Functional Block Diagram ................................................................................................................................ 9
Ball Assignments and Descriptions ................................................................................................................. 10
Package Dimensions ....................................................................................................................................... 13
Electrical Specifications .................................................................................................................................. 15
Absolute Maximum Ratings ........................................................................................................................ 15
Electrical Specifications – I
DD
Parameters ........................................................................................................ 17
Electrical Specifications – AC Operating Conditions ......................................................................................... 20
Output Drive Characteristics ........................................................................................................................... 23
Functional Description ................................................................................................................................... 26
Commands .................................................................................................................................................... 27
COMMAND INHIBIT .................................................................................................................................. 28
NO OPERATION (NOP) ............................................................................................................................... 28
LOAD MODE REGISTER (LMR) ................................................................................................................... 28
ACTIVE ...................................................................................................................................................... 28
READ ......................................................................................................................................................... 29
WRITE ....................................................................................................................................................... 30
PRECHARGE .............................................................................................................................................. 31
BURST TERMINATE ................................................................................................................................... 31
AUTO REFRESH ......................................................................................................................................... 31
SELF REFRESH ........................................................................................................................................... 32
DEEP POWER-DOWN ................................................................................................................................. 32
Truth Tables ................................................................................................................................................... 33
Initialization .................................................................................................................................................. 38
Mode Register ................................................................................................................................................ 40
Burst Length .............................................................................................................................................. 41
Burst Type .................................................................................................................................................. 41
CAS Latency ............................................................................................................................................... 43
Operating Mode ......................................................................................................................................... 43
Write Burst Mode ....................................................................................................................................... 43
Extended Mode Register ................................................................................................................................. 44
Temperature-Compensated Self Refresh ...................................................................................................... 44
Partial-Array Self Refresh ............................................................................................................................ 45
Output Drive Strength ................................................................................................................................ 45
Bank/Row Activation ...................................................................................................................................... 46
READ Operation ............................................................................................................................................. 47
WRITE Operation ........................................................................................................................................... 56
Burst Read/Single Write .............................................................................................................................. 63
PRECHARGE Operation .................................................................................................................................. 64
Auto Precharge ........................................................................................................................................... 64
AUTO REFRESH Operation ............................................................................................................................. 76
SELF REFRESH Operation ............................................................................................................................... 78
Power-Down .................................................................................................................................................. 80
Deep Power-Down ......................................................................................................................................... 81
Clock Suspend ............................................................................................................................................... 82
Revision History ............................................................................................................................................. 85
Rev. G, Production – 10/09 .......................................................................................................................... 85
Rev. F, Production – 8/09 ............................................................................................................................. 85
Rev. E, Production – 4/09 ............................................................................................................................ 85
Rev. D, Production – 10/08 .......................................................................................................................... 85
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Features
Rev. C, Preliminary – 9/08 ...........................................................................................................................
Rev. B, Preliminary – 6/08 ............................................................................................................................
Rev. A, Advance – 4/08 ................................................................................................................................
Revision History for Commands, Operations, and Timing Diagrams .............................................................
Update – 10/08 ...........................................................................................................................................
Update – 7/08 .............................................................................................................................................
Update – 5/08 .............................................................................................................................................
Update – 4/08 .............................................................................................................................................
85
85
85
85
85
85
85
86
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Features
List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: Key Timing Parameters ....................................................................................................................... 1
Table 3: VFBGA Ball Descriptions ................................................................................................................... 12
Table 4: Absolute Maximum Ratings .............................................................................................................. 15
Table 5: DC Electrical Characteristics and Operating Conditions ..................................................................... 15
Table 6: Capacitance ..................................................................................................................................... 16
Table 7: I
DD
Specifications and Conditions (x16) ............................................................................................. 17
Table 8: I
DD
Specifications and Conditions (x32) ............................................................................................. 17
Table 9: I
DD7
Specifications and Conditions (x16 and x32) ............................................................................... 18
Table 10: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 20
Table 11: AC Functional Characteristics ......................................................................................................... 21
Table 12: Target Output Drive Characteristics (Full Strength) ........................................................................... 23
Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 24
Table 14: Target Output Drive Characteristics (One-Half Strength) .................................................................. 25
Table 15: Truth Table – Commands and DQM Operation ................................................................................. 27
Table 16: Truth Table – Current State Bank
n,
Command to Bank
n
.................................................................. 33
Table 17: Truth Table – Current State Bank n, Command to Bank
m
................................................................. 35
Table 18: Truth Table – CKE ........................................................................................................................... 37
Table 19: Burst Definition Table ..................................................................................................................... 42
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2008 Micron Technology, Inc. All rights reserved.
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
