电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT9VDDF3272G-40BG3

产品描述存储器 - 模块 DDR SDRAM 256MB 200MHz 184-RDIMM
产品类别存储    存储卡/模块   
文件大小537KB,共30页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT9VDDF3272G-40BG3概述

存储器 - 模块 DDR SDRAM 256MB 200MHz 184-RDIMM

MT9VDDF3272G-40BG3规格参数

参数名称属性值
类别
厂商名称Micron Technology
存储器类型DDR SDRAM
存储容量256MB
速度200MHz
封装/外壳184-RDIMM

文档预览

下载PDF文档
256MB, 512MB (x72, ECC, SR) PC3200
184-PIN DDR SDRAM RDIMM
DDR SDRAM
REGISTERED DIMM
Features
184-pin, dual in-line memory module (DIMM)
Fast data transfer rates: PC3200
Utilizes 400 MT/s DDR SDRAM components
Registered Inputs with one-clock delay
Phase-lock loop (PLL) clock driver to reduce loading
Supports ECC error detection and correction
256MB (32 Meg x 72) and 512MB (64 Meg x 72)
V
DD
= V
DDQ
= +2.6V
V
DDSPD
= +2.3V to +3.6V
2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
Differential clock inputs CK and CK#
Four internal device banks for concurrent operation
Programmable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes
7.8125µs maximum average periodic refresh
interval
Serial Presence-Detect (SPD) with EEPROM
Programmable READ CAS latency
Gold edge contacts
MT9VDDF3272 – 256MB
MT9VDDF6472 – 512MB
For the latest data sheet, please refer to the Micron
Web
site:
www.micron.com/products/modules
Figure 1: 184-Pin DIMM (MO-206)
Low-Profile 1.125in. (28.58mm)
Very Low-Profile 0.72in. (18.29mm)
OPTIONS
MARKING
• Package
184-pin DIMM (standard)
184-pin DIMM (lead-free)
• Memory Clock, Speed, CAS Latency
2
5ns (200 MHz), 400 MT/s, CL = 3
• PCB
Low-Profile 1.125in. (28.58mm)
Very Low-Profile 0.72in. (18.29mm)
NOTE:
G
Y
-40B
1. Consult Micron for product availability.
2. CL = CAS (READ) Latency; registered mode will
add one clock cycle to CL.
Table 1:
Address Table
256MB
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
1 (S0#)
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (32 Meg x 8)
1K (A0–A9)
1 (S0#)
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 769  2198  1746  1898  2891  16  45  36  39  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved