Datasheet> 器件分类 > 半导体> 存储器> MT46H16M16LFBF-5 IT:H TR

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MT46H16M16LFBF-5 IT:H TR: 产品描述SDRAM - 移动 LPDDR 存储器 IC 256Mb（16M x 16）并联 200 MHz 5 ns 60-VFBGA（8x9）; 产品类别半导体存储器; 文件大小3MB，共96页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/; 标准

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MT46H16M16LFBF-5 IT:H TR概述

SDRAM - 移动 LPDDR 存储器 IC 256Mb（16M x 16）并联 200 MHz 5 ns 60-VFBGA（8x9）

MT46H16M16LFBF-5 IT:H TR规格参数

参数名称	属性值
类别
厂商名称	Micron Technology
包装	卷带（TR）
存储器类型	易失
存储器格式	DRAM
技术	SDRAM - 移动 LPDDR
存储容量	256Mb（16M x 16）
存储器接口	并联
写周期时间 - 字，页	15ns
电压 - 供电	1.7V ~ 1.95V
工作温度	-40°C ~ 85°C（TA）
安装类型	表面贴装型
封装/外壳	60-VFBGA
供应商器件封装	60-VFBGA（8x9）
时钟频率	200 MHz
访问时间	5 ns
基本产品编号	MT46H16M16

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256Mb: x16, x32 Mobile LPDDR SDRAM

Features

Mobile Low-Power DDR SDRAM

MT46H16M16LF – 4 Meg x 16 x 4 Banks

MT46H8M32LF – 2 Meg x 32 x 4 Banks

Features

•

DDQ

= 1.70–1.95V

•

Bidirectional data strobe per byte of data (DQS)

•

Internal, pipelined double data rate (DDR) architec-

ture; two data accesses per clock cycle

•

Differential clock inputs (CK and CK#)

•

Commands entered on each positive CK edge

•

DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

•

4 internal banks for concurrent operation

•

Data masks (DM) for masking write data—one mask

per byte

•

Programmable burst lengths (BL): 2, 4, 8, or 16

•

Concurrent auto precharge option is supported

•

Auto refresh and self refresh modes

•

1.8V LVCMOS-compatible inputs

•

On-chip temp sensor to control self refresh rate

•

Partial-array self refresh (PASR)

•

Deep power-down (DPD)

•

Status read register (SRR)

•

Selectable output drive strength (DS)

•

Clock stop capability

•

64ms refresh

Options

•

DDQ

–

1.8V/1.8V

•

Configuration

–

16 Meg x 16 (4 Meg x 16 x 4 banks)

–

8 Meg x 32 (2 Meg x 32 x 4 banks)

•

Row-size option

–

JEDEC-standard option

–

Reduced page-size option

•

Plastic "green" package

–

60-ball VFBGA (8mm x 9mm)

–

90-ball VFBGA (8mm x 13mm)

•

Timing – cycle time

–

5ns @ CL = 3 (200 MHz)

–

5.4ns @ CL = 3 (185 MHz)

–

6ns @ CL = 3 (166 MHz)

–

7.5ns @ CL = 3 (133 MHz)

•

Operating temperature range

–

Commercial (0˚ to +70˚C)

–

Industrial (–40˚C to +85˚C)

•

Design revision

Notes:

Marking

16M16

8M32

-5

-54

-6

-75

None

1. Only available for x16 configuration.

2. Only available for x32 configuration.

Table 1: Configuration Addressing

Reduced

Page-Size

Option

2 Meg x 32

x 4 banks

8K A[12:0]

256 A[7:0]

Architecture 16 Meg x 16 8 Meg x 32

Configuration 4 Meg x 16 x 2 Meg x 32 x

4 banks

Refresh count

Row

addressing

Column

addressing

8K A[12:0]

512 A[8:0]

4K A[11:0]

512 A[8:0]

PDF: 09005aef834bf85b

256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb: x16, x32 Mobile LPDDR SDRAM

Features

General Description ......................................................................................................................................... 8

Functional Block Diagrams ............................................................................................................................... 9

Ball Assignments and Descriptions ................................................................................................................. 11

Package Dimensions ...................................................................................................................................... 15

Electrical Specifications .................................................................................................................................. 17

Electrical Specifications – I

Parameters ........................................................................................................ 20

Electrical Specifications – AC Operating Conditions ......................................................................................... 24

Output Drive Characteristics ........................................................................................................................... 29

Functional Description ................................................................................................................................... 32

Commands .................................................................................................................................................... 33

DESELECT ................................................................................................................................................ 34

NO OPERATION ........................................................................................................................................ 34

LOAD MODE REGISTER ............................................................................................................................ 34

ACTIVE ..................................................................................................................................................... 34

READ ........................................................................................................................................................ 35

WRITE ...................................................................................................................................................... 36

PRECHARGE ............................................................................................................................................. 37

BURST TERMINATE .................................................................................................................................. 38

AUTO REFRESH ........................................................................................................................................ 38

SELF REFRESH ........................................................................................................................................... 39

DEEP POWER-DOWN ................................................................................................................................ 39

Truth Tables ................................................................................................................................................... 40

State Diagram ................................................................................................................................................ 45

Initialization .................................................................................................................................................. 46

Standard Mode Register .................................................................................................................................. 49

Burst Length .............................................................................................................................................. 49

Burst Type ................................................................................................................................................. 50

CAS Latency .............................................................................................................................................. 51

Operating Mode ......................................................................................................................................... 52

Extended Mode Register ................................................................................................................................. 53

Temperature-Compensated Self Refresh .................................................................................................... 53

Partial-Array Self Refresh ........................................................................................................................... 54

Output Drive Strength ................................................................................................................................ 54

Status Read Register ....................................................................................................................................... 55

Bank/Row Activation ...................................................................................................................................... 57

READ Operation ............................................................................................................................................. 58

WRITE Operation ........................................................................................................................................... 69

PRECHARGE Operation .................................................................................................................................. 81

Auto Precharge ............................................................................................................................................... 81

Concurrent Auto Precharge ........................................................................................................................ 82

AUTO REFRESH Operation ............................................................................................................................. 87

SELF REFRESH Operation .............................................................................................................................. 88

Power-Down .................................................................................................................................................. 89

Deep Power-Down .................................................................................................................................... 91

Clock Change Frequency ................................................................................................................................ 93

Revision History ............................................................................................................................................. 94

Rev. I, Production – 09/10 ........................................................................................................................... 94

Rev. H, Production – 11/09 .......................................................................................................................... 94

Rev. G, Production – 09/09 .......................................................................................................................... 94

Rev. F, Production – 4/09 ............................................................................................................................ 94

Contents

PDF: 09005aef834bf85b

256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb: x16, x32 Mobile LPDDR SDRAM

Features

Rev. E, Production – 3/09 ............................................................................................................................

Rev. D, Production – 02/09 ..........................................................................................................................

Rev. C, Production – 01/09 ..........................................................................................................................

Rev. B, Preliminary – 10/08 .........................................................................................................................

Rev. A, Advance – 08/08 ..............................................................................................................................

Revision History for Commands, Operations, and Timing Diagrams .............................................................

Update – 01/09 ...........................................................................................................................................

Update – 07/08 ...........................................................................................................................................

Update – 05/08 ...........................................................................................................................................

Update – 03/08 ...........................................................................................................................................

Update – 12/07 ...........................................................................................................................................

Update – 07/07 ...........................................................................................................................................

PDF: 09005aef834bf85b

256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

256Mb: x16, x32 Mobile LPDDR SDRAM

Features

Figure 1: 256Mb Mobile LPDDR Part Numbering ............................................................................................. 2

Figure 2: Functional Block Diagram (x16) ......................................................................................................... 9

Figure 3: Functional Block Diagram (x32) ....................................................................................................... 10

Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View) ......................................................................................... 11

Figure 5: 90-Ball VFBGA – 8mm x 13mm (Top View) ....................................................................................... 12

Figure 6: 60-Ball VFBGA (8mm x 9mm) .......................................................................................................... 15

Figure 7: 90-Ball VFBGA (8mm x 13mm) ......................................................................................................... 16

Figure 8: Typical Self Refresh Current vs. Temperature ................................................................................... 23

Figure 9: ACTIVE Command .......................................................................................................................... 35

Figure 10: READ Command ........................................................................................................................... 36

Figure 11: WRITE Command ......................................................................................................................... 37

Figure 12: PRECHARGE Command ................................................................................................................ 38

Figure 13: DEEP POWER-DOWN Command .................................................................................................. 39

Figure 14: Simplified State Diagram ............................................................................................................... 45

Figure 15: Initialize and Load Mode Registers ................................................................................................. 47

Figure 16: Alternate Initialization with CKE LOW ............................................................................................ 48

Figure 17: Standard Mode Register Definition ................................................................................................ 49

Figure 18: CAS Latency .................................................................................................................................. 52

Figure 19: Extended Mode Register ................................................................................................................ 53

Figure 20: Status Read Register Timing .......................................................................................................... 55

Figure 21: Status Register Definition .............................................................................................................. 56

Figure 22: READ Burst ................................................................................................................................... 59

Figure 23: Consecutive READ Bursts .............................................................................................................. 60

Figure 24: Nonconsecutive READ Bursts ........................................................................................................ 61

Figure 25: Random Read Accesses ................................................................................................................. 62

Figure 26: Terminating a READ Burst ............................................................................................................. 63

Figure 27: READ-to-WRITE ............................................................................................................................ 64

Figure 28: READ-to-PRECHARGE .................................................................................................................. 65

Figure 29: Data Output Timing –

DQSQ,

QH, and Data Valid Window (x16) ................................................... 66

Figure 30: Data Output Timing –

DQSQ,

QH, and Data Valid Window (x32) ................................................... 67

Figure 31: Data Output Timing –

AC and

DQSCK .......................................................................................... 68

Figure 32: Data Input Timing ......................................................................................................................... 70

Figure 33: Write – DM Operation ................................................................................................................... 71

Figure 34: WRITE Burst ................................................................................................................................. 72

Figure 35: Consecutive WRITE-to-WRITE ....................................................................................................... 73

Figure 36: Nonconsecutive WRITE-to-WRITE ................................................................................................. 73

Figure 37: Random WRITE Cycles .................................................................................................................. 74

Figure 38: WRITE-to-READ – Uninterrupting ................................................................................................. 75

Figure 39: WRITE-to-READ – Interrupting ...................................................................................................... 76

Figure 40: WRITE-to-READ – Odd Number of Data, Interrupting .................................................................... 77

Figure 41: WRITE-to-PRECHARGE – Uninterrupting ...................................................................................... 78

Figure 42: WRITE-to-PRECHARGE – Interrupting ........................................................................................... 79

Figure 43: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting ......................................................... 80

Figure 44: Bank Read – With Auto Precharge .................................................................................................. 83

Figure 45: Bank Read – Without Auto Precharge ............................................................................................. 84

Figure 46: Bank Write – With Auto Precharge .................................................................................................. 85

Figure 47: Bank Write – Without Auto Precharge ............................................................................................. 86

Figure 48: Auto Refresh Mode ........................................................................................................................ 87

Figure 49: Self Refresh Mode ......................................................................................................................... 89

Figure 50: Power-Down Entry (in Active or Precharge Mode) .......................................................................... 90

List of Figures

PDF: 09005aef834bf85b

256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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