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MT46H32M16LFBF-6 IT:C TR

产品描述SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)
产品类别半导体    存储器   
文件大小1MB,共96页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT46H32M16LFBF-6 IT:C TR概述

SDRAM - 移动 LPDDR 存储器 IC 512Mb(32M x 16) 并联 166 MHz 5 ns 60-VFBGA(8x9)

MT46H32M16LFBF-6 IT:C TR规格参数

参数名称属性值
类别
厂商名称Micron Technology
包装卷带(TR)剪切带(CT)Digi-Reel®
存储器类型易失
存储器格式DRAM
技术SDRAM - 移动 LPDDR
存储容量512Mb(32M x 16)
存储器接口并联
写周期时间 - 字,页15ns
电压 - 供电1.7V ~ 1.95V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳60-VFBGA
供应商器件封装60-VFBGA(8x9)
时钟频率166 MHz
访问时间5 ns
基本产品编号MT46H32M16

文档预览

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512Mb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
MT46H16M32LG – 4 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-6
Clock Rate
200 MHz
166 MHz
Access Time
5.0ns
5.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard addressing
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
– 90-ball VFBGA (8mm x 13mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 6ns @ CL = 3 (166 MHz)
• Power
– Standard I
DD2
/I
DD6
– Low-power I
DD2
/I
DD6
• Product certification
– Automotive
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Design revision
Notes:
Marking
H
32M16
16M32
LF
BF
B5
BQ
-5
-6
None
L
A
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
PDF: 09005aef846e285e
t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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