电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CY15B064J-SXAT

产品描述FRAM(铁电体 RAM) 存储器 IC 64Kb I²C 1 MHz 8-SOIC
产品类别半导体    存储器   
文件大小376KB,共17页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
下载文档 详细参数 全文预览

CY15B064J-SXAT在线购买

供应商 器件名称 价格 最低购买 库存  
CY15B064J-SXAT - - 点击查看 点击购买

CY15B064J-SXAT概述

FRAM(铁电体 RAM) 存储器 IC 64Kb I²C 1 MHz 8-SOIC

CY15B064J-SXAT规格参数

参数名称属性值
类别
厂商名称Infineon(英飞凌)
系列Automotive, AEC-Q100, F-RAM™
包装卷带(TR)
存储器类型非易失
存储器格式FRAM
技术FRAM(铁电体 RAM)
存储容量64Kb
存储器组织8K x 8
存储器接口I²C
时钟频率1 MHz
电压 - 供电3V ~ 3.6V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC
基本产品编号CY15B064

文档预览

下载PDF文档
CY15B064J
64-Kbit (8K × 8) Serial (I
2
C) Automotive-A
F-RAM
64-Kbit (8K × 8) Serial (I
2
C) Automotive-A F-RAM
Features
Functional Description
The CY15B064J is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the CY15B064J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The CY15B064J
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the CY15B064J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15B064J provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-a temperature
range of –40
C
to +85
C.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
(typ) active current at 100 kHz
3
A
(typ) standby current
Voltage operation: V
DD
= 2.7 V to 3.65 V
Automotive-A temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
13
8Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A0
Control Logic
Cypress Semiconductor Corporation
Document Number: 002-10221 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 24, 2017

推荐资源

热门文章更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 853  2498  2129  1348  394  18  51  43  28  8 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved