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CY7C1370KV33-167AXIT

产品描述SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 100-TQFP(14x20)
产品类别半导体    存储器   
文件大小786KB,共32页
制造商Cypress(赛普拉斯)
标准
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CY7C1370KV33-167AXIT概述

SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 100-TQFP(14x20)

CY7C1370KV33-167AXIT规格参数

参数名称属性值
类别
厂商名称Cypress(赛普拉斯)
系列NoBL™
包装卷带(TR)
存储器类型易失
存储器格式SRAM
技术SRAM - 同步,SDR
存储容量18Mb(512K x 36)
存储器接口并联
电压 - 供电3.135V ~ 3.6V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳100-LQFP
供应商器件封装100-TQFP(14x20)
时钟频率167 MHz
访问时间3.4 ns
基本产品编号CY7C1370

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CY7C1370KV33/CY7C1370KVE33
CY7C1372KV33/CY7C1372KVE33
18-Mbit (512K × 36/1M × 18) Pipelined SRAM
with NoBL™ Architecture (With ECC)
18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)
Features
Functional Description
The CY7C1370KV33/CY7C1370KVE33/CY7C1372KV33/
CY7C1372KVE33 are 3.3 V, 512K × 36 and 1M × 18
synchronous pipelined burst SRAMs with No Bus Latency™
(NoBL logic, respectively. They are designed to support
unlimited true back-to-back read/write operations with no wait
states. The CY7C1370KV33/CY7C1370KVE33/
CY7C1372KV33/CY7C1372KVE33 are equipped with the
advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1370KV33/CY7C1370KVE33/CY7C1372KV33/
CY7C1372KVE33 are pin compatible and functionally equivalent
to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the byte write selects (BW
a
BW
d
for CY7C1370KV33/CY7C1370KVE33 and BW
a
–BW
b
for
CY7C1372KV33/CY7C1372KVE33) and a write enable (WE)
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tristated during
the data portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
3.3 V core power supply (V
DD
)
3.3 V/2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.5 ns (for 250 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free
165-ball FBGA package
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
On chip Error Correction Code (ECC) to reduce Soft Error Rate
(SER)
Selection Guide
Description
Maximum access time
Maximum operating current
× 18
× 36
250 MHz
2.5
180
200
200 MHz
3.0
158
178
167 MHz
3.4
143
163
Unit
ns
mA
Cypress Semiconductor Corporation
Document Number: 001-97836 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 19, 2017

 
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