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CY15E016Q-SXA

产品描述FRAM(铁电体 RAM) 存储器 IC 16Kb(2K x 8) SPI 20 MHz 8-SOIC
产品类别半导体    存储器   
文件大小593KB,共20页
制造商Cypress(赛普拉斯)
标准
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CY15E016Q-SXA概述

FRAM(铁电体 RAM) 存储器 IC 16Kb(2K x 8) SPI 20 MHz 8-SOIC

CY15E016Q-SXA规格参数

参数名称属性值
类别
厂商名称Cypress(赛普拉斯)
系列Automotive, AEC-Q100, F-RAM™
包装管件
存储器类型非易失
存储器格式FRAM
技术FRAM(铁电体 RAM)
存储容量16Kb(2K x 8)
存储器接口SPI
电压 - 供电4.5V ~ 5.5V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC
时钟频率20 MHz
基本产品编号CY15E016

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CY15E016Q
16-Kbit (2K × 8) Serial (SPI) Automotive-A
F-RAM
16-Kbit (2K × 8) Serial (SPI) Automotive-A F-RAM
Features
Functional Description
The CY15E016Q is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15E016Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15E016Q is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the CY15E016Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15E016Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15E016Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an Automotive-a temperature
range of –40
C
to +85
C.
16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
250
A
active current at 1 MHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
Automotive-A temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
2Kx8
F-RAM Array
Instruction Register
Address Register
Counter
SI
11
8
Data
I/
O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 002-10236 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 18, 2017

 
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