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CY7C1380KV33-167BZIT

产品描述SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 165-FBGA(13x15)
产品类别半导体    存储器   
文件大小3MB,共33页
制造商Cypress(赛普拉斯)
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CY7C1380KV33-167BZIT概述

SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 165-FBGA(13x15)

CY7C1380KV33-167BZIT规格参数

参数名称属性值
类别
厂商名称Cypress(赛普拉斯)
包装卷带(TR)
存储器类型易失
存储器格式SRAM
技术SRAM - 同步,SDR
存储容量18Mb(512K x 36)
存储器接口并联
电压 - 供电3.135V ~ 3.6V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳165-LBGA
供应商器件封装165-FBGA(13x15)
时钟频率167 MHz
访问时间3.4 ns
基本产品编号CY7C1380

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CY7C1380KV33
CY7C1382KV33
18-Mbit (512K × 36/1M × 18)
Pipelined SRAM
18-Mbit (512K × 36/1M × 18) Pipelined SRAM
Features
Functional Description
The CY7C1380KV33/CY7C1382KV33 SRAM integrates
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive edge triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining chip enable (CE
1
), depth-expansion
chip enables (CE
2
and CE
3
), burst control inputs (ADSC, ADSP,
and ADV), write enables (BW
X
, and BWE), and global write
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as they are controlled by the advance pin
(ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle. This part supports byte write
operations (see
Pin Definitions on page 6
and
Truth Table on
page 10
for further details). Write cycles can be one to two or four
bytes wide as controlled by the byte write control inputs. GW
when active LOW causes all bytes to be written.
The CY7C1380KV33/CY7C1382KV33 operates from a +3.3 V
core power supply while all outputs operate with a +2.5 or +3.3 V
power supply. All inputs and outputs are JEDEC-standard and
JESD8-5-compatible.
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
3.3 V core power supply
2.5 V or 3.3 V I/O power supply
Fast clock-to-output times
2.5 ns (for 250 MHz device)
Provides high performance 3-1-1-1 access rate
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Single cycle chip deselect
Available in JEDEC-standard Pb-free 100-pin TQFP and non
Pb-free 165-ball FBGA package.
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
× 18
× 36
250 MHz
2.5
180
200
200 MHz
3.0
158
178
167 MHz
3.4
143
163
Unit
ns
mA
Cypress Semiconductor Corporation
Document Number: 001-97878 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 1, 2016

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