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CY7C1383KV33-133AXCT

产品描述SRAM - 同步,SDR 存储器 IC 18Mb(1M x 18) 并联 133 MHz 6.5 ns 100-TQFP(14x20)
产品类别半导体    存储器   
文件大小885KB,共34页
制造商Cypress(赛普拉斯)
标准
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CY7C1383KV33-133AXCT概述

SRAM - 同步,SDR 存储器 IC 18Mb(1M x 18) 并联 133 MHz 6.5 ns 100-TQFP(14x20)

CY7C1383KV33-133AXCT规格参数

参数名称属性值
类别
厂商名称Cypress(赛普拉斯)
包装卷带(TR)
存储器类型易失
存储器格式SRAM
技术SRAM - 同步,SDR
存储容量18Mb(1M x 18)
存储器接口并联
电压 - 供电3.135V ~ 3.6V
工作温度0°C ~ 70°C(TA)
安装类型表面贴装型
封装/外壳100-LQFP
供应商器件封装100-TQFP(14x20)
时钟频率133 MHz
访问时间6.5 ns
基本产品编号CY7C1383

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CY7C1381KV33/CY7C1381KVE33
CY7C1383KV33/CY7C1383KVE33
18-Mbit (512K × 36/1M × 18)
Flow-Through SRAM (With ECC)
18-Mbit (512K × 36/1M × 18) Flow-Through SRAM (With ECC)
Features
Functional Description
The CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 are a 3.3 V, 512K × 36 and 1M × 18
synchronous flow through SRAMs, designed to interface with
high speed microprocessors with minimum glue logic. Maximum
access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit
on-chip counter captures the first address in a burst and
increments the address automatically for the rest of the burst
access. All synchronous inputs are gated by registers controlled
by a positive edge triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address pipelining
chip enable (CE
1
), depth-expansion chip enables (CE
2
and
CE
3
), burst control inputs (ADSC, ADSP, and ADV), write
enables (BW
x
, and BWE), and global write (GW). Asynchronous
inputs include the output enable (OE) and the ZZ pin.
The CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 allows interleaved or linear burst sequences,
selected by the MODE input pin. A HIGH selects an interleaved
burst sequence, while a LOW selects a linear burst sequence.
Burst accesses can be initiated with the processor address
strobe (ADSP) or the cache controller address strobe (ADSC)
inputs. Address advancement is controlled by the address
advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as controlled by the advance pin (ADV).
CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/
CY7C1383KVE33 operates from a +3.3 V core power supply
while all outputs operate with a +2.5 V or +3.3 V supply. All inputs
and outputs are JEDEC-standard and JESD8-5-compatible.
Supports 133 MHz bus operations
512K × 36 and 1M × 18 common I/O
3.3 V core power supply (V
DD
)
2.5 V or 3.3 V I/O supply (V
DDQ
)
Fast clock-to-output time
6.5 ns (133 MHz version)
Provides high performance 2-1-1-1 access rate
User selectable burst counter supporting interleaved or linear
burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
CY7C1381KV33/CY7C1381KVE33
available
in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free 165-ball
FBGA package. CY7C1383KV33/CY7C1383KVE33 available
in JEDEC-standard Pb-free 100-pin TQFP.
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option.
On-chip error correction code (ECC) to reduce soft error rate
(SER)
Selection Guide
Description
Maximum access time
Maximum operating current
× 18
× 36
133 MHz
6.5
129
149
100 MHz
8.5
114
134
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document Number: 001-97888 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 16, 2018
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