MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Peak (Note 3)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Value
-40
-40
-5.0
-200
-800
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
-55 to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
2
SOT-23 (TO-236)
CASE 318
STYLE 6
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR- 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
2A M
G
G
2A = Specific Device Code
M = Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBT3906LT1
MMBT3906LT1G
MMBT3906LT3
MMBT3906LT3G
Package
SOT-23
SOT-23
(Pb-Free)
SOT-23
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT-23 10,000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 6
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(I
C
= -1.0 mAdc, I
B
= 0)
Collector - Base Breakdown Voltage
(I
C
= -10
mAdc,
I
E
= 0)
Emitter - Base Breakdown Voltage
(I
E
= -10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= -30 Vdc, V
EB
= -3.0 Vdc)
Collector Cutoff Current
(V
CE
= -30 Vdc, V
EB
= -3.0 Vdc)
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(I
C
= -0.1 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -1.0 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -10 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -50 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -100 mAdc, V
CE
= -1.0 Vdc)
Collector - Emitter Saturation Voltage
(I
C
= -10 mAdc, I
B
= -1.0 mAdc)
(I
C
= -50 mAdc, I
B
= -5.0 mAdc)
Base - Emitter Saturation Voltage
(I
C
= -10 mAdc, I
B
= -1.0 mAdc)
(I
C
= -50 mAdc, I
B
= -5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(I
C
= -10 mAdc, V
CE
= -20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= -5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= -0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc, f = 1.0 kHz)
Small - Signal Current Gain
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= -100
mAdc,
V
CE
= -5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= -3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= -10 mAdc, I
B1
= -1.0 mAdc)
(V
CC
= -3.0 Vdc, I
C
= -10 mAdc,
I
B1
= I
B2
= -1.0 mAdc)
t
d
t
r
t
s
t
f
-
-
-
-
35
35
225
ns
75
ns
f
T
250
C
obo
-
C
ibo
-
h
ie
2.0
h
re
0.1
h
fe
100
h
oe
3.0
NF
-
4.0
60
dB
400
mmhos
10
-
12
X 10
- 4
10
kW
4.5
pF
-
pF
MHz
H
FE
60
80
100
60
30
V
CE(sat)
-
-
V
BE(sat)
-0.65
-
-0.85
-0.95
-0.25
-0.4
Vdc
-
-
300
-
-
Vdc
-
V
(BR)CEO
-40
V
(BR)CBO
-40
V
(BR)EBO
-5.0
I
BL
-
I
CEX
-
-50
-50
nAdc
-
nAdc
-
Vdc
-
Vdc
Vdc
Symbol
Min
Max
Unit
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
http://onsemi.com
2
MMBT3906LT1
3V
+9.1 V
275
< 1 ns
+0.5 V
10 k
0
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
t
1
10.9 V
1N916
C
S
< 4 pF*
10 k
< 1 ns
275
3V
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
1000
700
500
300
200
100
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
Figure 4. Charge Data
500
300
200
100
70
50
30
20
10
7
5
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
500
300
200
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
TIME (ns)
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Fall Time
http://onsemi.com
3
MMBT3906LT1
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= - 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8
6
4
2
0
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
1.0
0
0.1
0.1
0.2
0.4
1.0 2.0
4.0
10
20
R
g
, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
h PARAMETERS
(V
CE
= - 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0 7.0 10
100
70
50
30
20
h fe , DC CURRENT GAIN
200
100
70
50
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Current Gain
20
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
http://onsemi.com
4
MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
- 55°C
+25°C
V
CE
= 1.0 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
I
B
, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
1.0
0.5
0
- 0.5
+25°C TO +125°C
- 1.0
- 55°C TO +25°C
- 1.5
- 2.0
q
VB
FOR V
BE(sat)
q
VC
FOR V
CE(sat)
+25°C TO +125°C
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
0.6
- 55°C TO +25°C
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0
1.0
2.0
50
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
100
200
0
20
40
60
80 100 120 140
I
C
, COLLECTOR CURRENT (mA)
160
180 200
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
