电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N941B

产品描述Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35,
产品类别分立半导体    二极管   
文件大小113KB,共2页
制造商Compensated Devices Inc
下载文档 详细参数 全文预览

1N941B在线购买

供应商 器件名称 价格 最低购买 库存  
1N941B - - 点击查看 点击购买

1N941B概述

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35,

1N941B规格参数

参数名称属性值
其他特性METALLURGICALLY BONDED
电压温度Coeff-Max1.17 mV/°C
最大电压容差4.96%
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
外壳连接ISOLATED
最大功率耗散0.5 W
标称参考电压11.7 V
表面贴装NO
技术ZENER
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
元件数量1
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
JESD-609代码e0
认证状态Not Qualified
最高工作温度175 °C
最低工作温度-65 °C
Is SamacsysN
Objectid1474934930
Reach Compliance CodeUnknown
ECCN代码EAR99

文档预览

下载PDF文档
• 1N941B, 1N943B, 1N944B AND 1N945B AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/157
• 1N941B-1, 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/157
• 11.7 VOLT NOMINAL ZENER VOLTAGE
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• METALLURGICALLY BONDED
1N941 thru 1N945B
and
1N941B-1 thru 1N945B-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 15
µ
A @ 25°C & V
R
= 8 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
v @I
z
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
VOLTAGE
TEMPERATURE
ZENER
TEMPERATURE
RANGE
IMPEDANCE
STABILITY
ZZT
∆V
ZT
MAXIMUM
(Note 1)
(Note 2)
mV
88
181
239
44
90
120
18
36
47
9
18
24
4
9
12
°C
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +150
-55 to +150
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTS
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
1N943B
1N944
1N944A
1N944B
1N945
1N945A
1N945B
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12 -12.28
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to
10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e., the
diode voltage will not exceed the specified mV at any discrete temperature between
the established limits, per JEDEC standard No.5.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 349  2661  2522  674  689  8  54  51  14  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved