HITANO ENTERPRISE CORP..
1N4148W THRU 1N4448W
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE
VOLTAGE RANGE -50 to 100 Volts
CURRENT - 0.15 to 0.2 Ampere
FEATURES
* Low power loss, high
efficiency
* Low leakage
* Low forward voltage drop
* High speed switching
* High current capability
* High reliability
SOD-123
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per
MIL-STD-202E, Method 208 guaranteed
* Mounting position: Any
* Weight: 0.008 grams Approx.
.028(0.7)
.019(0.5)
.154(3.9)
.141(3.6)
.110(2.8)
.098(2.5)
.071(1.8)
.055(1.4)
.008
MAX.
(0.2)
.005
MAX.
(0.12)
.053(1.4)
.037(1.0)
.016
MIN.
(0.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by
20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Power Dissipation Tamb=25 C
Maximum Forward Voltage
Maximum Reverse Current at Rated DC Blocking Voltage @ T
A
=25
o
C
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance(Note 2)
Operating and Storage Temperature Range
Note: 1. Test conditions: I
F
=I
R
=10mA, R
L
=100Ω, measured at I
R
=1mA
2. Measured at 1MHz and V
R
=0
o
1N4148W
75
100
150
2.0
1N4150W
50
50
200
0.5
410
1N4151W
50
75
150
1N4448W
75
100
150
4.0
UNITS
V
V
mA
A
mW
V
DC
V
RRM
Io
I
FSM
Ptot
V
F
I
R
trr
C
J
T
J
,T
STG
1.0 / 50mA 1.0 / 200mA
2.5
4.0
4.0
0.1
1.0 / 10mA
0.05
2.0
2.0
0.72 / 5mA
1.0 / 100mA
2.5
4.0
4.0
V
µA
ns
pF
o
-55 to + 125
C
RATING AND CHARACTERISTIC CURVES (1N4148W THRU 1N4448W)
FIG.1 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
10
FIG.2 - TYPICAL REVERSE CHARACTERISTICS
T
A
= 150 C
T
A
= 125 C
o
o
1
1
T
A
= 85 C
o
0.1
T
A
= 55 C
o
0.1
0.01
T
A
= 25 C
o
0.01
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
0.001
0
10
20
30
40
50
REVERSE VOLTAGE, (V)
FIG.3 - TYPICAL JUNCTION CAPACITANCE
6.0
FIG.4 - RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
4.5
3.0
60
Ω
V
RF
=2V
2nF
5k
Ω
V
O
1.5
1N4 51W
0
0
2
4
6
8
REVERSE VOLTAGE, (V)
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