• AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N483B
1N485B
1N486B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
0.085/0.125
2.16/3.18
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
TYPE
VRM
V RWM
IO
IO
TA = 150°C
mA
50
50
50
I FSM
TP = 1/120 s
TA = 25°C
A
2
2
2
V (pk)
1N483B
1N485B
1N486B
80
180
250
V (pk)
70
180
225
mA
200
200
200
FIGURE 1
TYPE
VF
@100mA
I R1 at V RWM
TA = 25°C
nA dc
25
25
25
I R2 at V RM
TA = 25°C
µA
100
100
100
I R3 at V RWM
TA = 150°C
µA dc
5
5
5
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO-7 outline
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
200 ˚C/W maximum
THERMAL IMPEDANCE: (ZO
JX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
V dc
1N483B
1N485B
1N486B
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
MOUNTING POSITION:
Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
IN483B, IN485B
1000
and
IN486B
100
IF - Forward Current - (mA)
10
15
0ºC
100
ºC
25º
C
1
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1.1
1.2
1.3
1000
100
IR - Reverese Current - (µA)
10
1
150ºC
0.1
C
100º
25ºC
.01
-65ºC
-65ºC
NOTE :
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
All temperatures shown on graphs are
junction temperatures
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