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1SV323,H3F(T

产品描述Variable Capacitance Diode
产品类别分立半导体    二极管   
文件大小137KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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1SV323,H3F(T概述

Variable Capacitance Diode

1SV323,H3F(T规格参数

参数名称属性值
Is SamacsysN
Objectid8289091990
ECCN代码EAR99
Samacsys StatusIncomplete
Samacsys Pin Count0
Reach Compliance CodeCompliant
Samacsys PartID19515094
Samacsys ManufacturerToshiba
Samacsys Modified On2024-04-17 10:10:39
是否Rohs认证Yes
二极管类型VARIABLE CAPACITANCE DIODE
峰值回流温度(摄氏度)NOT SPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED

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1SV323
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SV323
TCXO/VCO
High capacitance ratio: C
1V
/ C
4V
= 4.3 (typ.)
Low series resistance: r
s
= 0.4
(typ.)
Useful for small size tuner.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
125
−55
to 125
Unit
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1V
C
4V
C
1V
/ C
4V
r
s
I
R
=
1
μA
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
V
R
=
4 V, f
=
100 MHz
Test Condition
Min
10
26.5
6.0
4.0
Typ.
4.3
0.4
Max
3
29.5
7.1
0.8
Unit
V
nA
pF
pF
Ω
Note: Signal level when capacitance is measured: V
sig
=
500 mVrms
Marking
Start of commercial production
1999-03
1
2014-03-01

 
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