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1SV278B(TPL3)

产品描述1SV278B(TPL3)
产品类别分立半导体    二极管   
文件大小153KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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1SV278B(TPL3)概述

1SV278B(TPL3)

1SV278B(TPL3)规格参数

参数名称属性值
Objectid113483431
Reach Compliance CodeUnknown
ECCN代码EAR99
Is SamacsysN
YTEOL2

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1SV278B
TOSHIBA Variable Capacitance Diode
Silicon Epitaxial Planar Type
1SV278B
TV Tuning
High capacitance ratio: C
2 V
/C
25 V
= 6.5 (typ.)
Low series resistance: r
s
= 0.4
(typ.)
Excellent C-V characteristics, and small tracking error.
Suitable for small tuners
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
V
RM
T
j
T
stg
Rating
30
35 (R
L
=
10 kΩ)
125
−55~125
Unit
V
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
2 V
C
25 V
C
2 V
/C
25 V
r
s
I
R
=
1
μA
V
R
=
28 V
V
R
=
2 V, f
=
1 MHz
V
R
=
25 V, f
=
1 MHz
V
R
=
5 V, f
=
470 MHz
Test Condition
Min
30
14.16
2.01
5.90
Typ.
6.50
0.4
Max
10
16.25
2.43
7.28
0.58
Unit
V
nA
pF
pF
Ω
Note 1: Available in matched group for capacitance to 2.%.
C (max)
C (min)
<
=
0.02
C (min)
(V
R
=
2~25 V)
Marking
1
2007-11-01

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