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GS81313LT18GK-833I

产品描述DDR SRAM, 8MX18, CMOS, PBGA260, BGA-260
产品类别存储    存储   
文件大小376KB,共29页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
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GS81313LT18GK-833I概述

DDR SRAM, 8MX18, CMOS, PBGA260, BGA-260

GS81313LT18GK-833I规格参数

参数名称属性值
是否Rohs认证符合
厂商名称GSI Technology
包装说明HBGA,
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
JESD-30 代码R-PBGA-B260
长度22 mm
内存密度150994944 bit
内存集成电路类型DDR SRAM
内存宽度18
功能数量1
端子数量260
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
组织8MX18
封装主体材料PLASTIC/EPOXY
封装代码HBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, HEAT SINK/SLUG
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
座面最大高度2.3 mm
最大供电电压 (Vsup)1.35 V
最小供电电压 (Vsup)1.2 V
标称供电电压 (Vsup)1.25 V
表面贴装YES
技术CMOS
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

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GS81313LT18/36GK-833/714/625
260-Pin BGA
Com & Ind Temp
HSTL I/O
Features
4Mb x 36 and 8Mb x 18 organizations available
833 MHz maximum operating frequency
833 MT/s peak transaction rate (in millions per second)
60 Gb/s peak data bandwidth (in x36 devices)
Common I/O DDR Data Bus
Non-multiplexed SDR Address Bus
One operation - Read or Write - per clock cycle
Burst of 2 Read and Write operations
3 cycle Read Latency
On-chip ECC with virtually zero SER
1.25V ~ 1.3V core voltage
1.2V ~ 1.3V HSTL I/O interface
Configurable ODT (on-die termination)
ZQ pin for programmable driver impedance
ZT pin for programmable ODT impedance
IEEE 1149.1 JTAG-compliant Boundary Scan
260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS-
compliant BGA package
144Mb SigmaDDR-IIIe™
Burst of 2 ECCRAM™
Clocking and Addressing Schemes
Up to 833 MHz
1.25V ~ 1.3V V
DD
1.2V ~ 1.3V V
DDQ
The GS81313LT18/36GK SigmaDDR-IIIe ECCRAMs are
synchronous devices. They employ three pairs of positive and
negative input clocks; one pair of master clocks, CK and CK,
and two pairs of write data clocks, KD[1:0] and KD[1:0]. All
six input clocks are single-ended; that is, each is received by a
dedicated input buffer.
CK and CK are used to latch address and control inputs, and to
control all output timing. KD[1:0] and KD[1:0] are used solely
to latch data inputs.
Each internal read and write operation in a SigmaDDR-IIIe B2
ECCRAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaDDR-IIIe B2 ECCRAM is always one address
pin less than the advertised index depth (e.g. the 8M x 18 has
4M addressable index).
SigmaDDR-IIIe™ Family Overview
SigmaDDR-IIIe ECCRAMs are the Common I/O half of the
SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance
ECCRAMs. Although very similar to GSI's second generation
of networking SRAMs (the SigmaQuad-II/SigmaDDR-II
family), these third generation devices offer several new
features that help enable significantly higher performance.
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by SER events such as cosmic rays, alpha particles,
etc. The resulting Soft Error Rate of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no on-chip ECC,
which typically have an SER of 200 FITs/Mb or more.
All quoted SER values are at sea level in New York City.
Parameter Synopsis
Speed Grade
-833
-714
-625
Max Operating Frequency
833 MHz
714 MHz
625 MHz
Read Latency
3 cycles
3 cycles
3 cycles
V
DD
1.2V to 1.35V
1.2V to 1.35V
1.2V to 1.35V
Rev: 1.13 7/2016
1/29
© 2014, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS81313LT18GK-833I相似产品对比

GS81313LT18GK-833I GS81313LT18GK-714 GS81313LT18GK-714I
描述 DDR SRAM, 8MX18, CMOS, PBGA260, BGA-260 DDR SRAM, 8MX18, CMOS, PBGA260, BGA-260 DDR SRAM, 8MX18, CMOS, PBGA260, BGA-260
是否Rohs认证 符合 符合 符合
厂商名称 GSI Technology GSI Technology GSI Technology
包装说明 HBGA, HBGA, HBGA,
Reach Compliance Code compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
JESD-30 代码 R-PBGA-B260 R-PBGA-B260 R-PBGA-B260
长度 22 mm 22 mm 22 mm
内存密度 150994944 bit 150994944 bit 150994944 bit
内存集成电路类型 DDR SRAM DDR SRAM DDR SRAM
内存宽度 18 18 18
功能数量 1 1 1
端子数量 260 260 260
字数 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 8MX18 8MX18 8MX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HBGA HBGA HBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG GRID ARRAY, HEAT SINK/SLUG
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
座面最大高度 2.3 mm 2.3 mm 2.3 mm
最大供电电压 (Vsup) 1.35 V 1.35 V 1.35 V
最小供电电压 (Vsup) 1.2 V 1.2 V 1.2 V
标称供电电压 (Vsup) 1.25 V 1.25 V 1.25 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
端子形式 BALL BALL BALL
端子节距 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 14 mm 14 mm 14 mm
Base Number Matches 1 1 1
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