Agilent HCPL-181
Phototransistor Optocoupler
SMD Mini-Flat Type
Data Sheet
Description
The HCPL-181 contains a light
emitting diode optically coupled to
a phototransistor. It is packaged in
a 4-pin mini-flat SMD package with
a 2.0 mm profile. The small
dimension of this product allows
significant space saving. The
package volume is 30% smaller
than that of conventional DIP type.
Input-output isolation voltage is
3750 Vrms. Response time, t
r
, is
typically 4
µs
and minimum CTR is
50% at input current of 5 mA.
Ordering Information
Specify part number followed by
Option Number (if desired).
HCPL-181-XXXX
Option Number
060 = IEC/EN/DIN EN 60747-5-2
Option
00A = Rank Mark A
00B = Rank Mark B
00C = Rank Mark C
00D = Rank Mark D
XXXE =Lead Free Option
Features
• Current Transfer Ratio
(CTR: min. 50% at I
F
= 5 mA,
V
CE
= 5 V)
• High input-output isolation voltage
(V
iso
= 3750 Vrms)
• High collector-emitter voltage (V
CEO
= 80 V)
• Response time (t
r
: typ., 4
µs
at
V
CE
= 2 V, I
C
= 2 mA, R
L
= 100
Ω)
• Mini-flat package (2.0 mm profile) in
tape and reel package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2 approved
• Options available:
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• I/O interfaces for computers
• System appliances, measuring in-
struments
• Signal transmission between cir-
cuits of different potentials and
impedances
• Feedback circuit in power supply
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
4
3
ANODE
1
+
I
F
I
C
4
COLLECTOR
Schematic
V
F
CATHODE
–
2
3
EMITTER
1
1. ANODE
2. CATHODE
2
3. EMITTER
4. COLLECTOR
CAUTION:
It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawing
2.54
± 0.25
3.60 ± 0.3
TYPE NUMBER
DATE CODE
5.30 ± 0.3
181V
YWW
OPTION CODE
FOR OPTION 060
ONLY
4.40 ± 0.2
2.00 ± 0.2
0.2 ± 0.05
RANK MARK
0.40 ± 0.1
0.10 ± 0.1
+ 0.4
0.5 + 0.2
+ 0.2
7.00 – 0.7
DIMENSIONS IN MILLIMETERS AND (INCHES)
Absolute Maximum Ratings (T
A
= 25˚C)
Storage Temperature, T
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
I
Collector Current, I
C
Collector-Emitter Voltage, V
CEO
Emitter-Collector Voltage, V
ECO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
iso
(AC for 1 minute, R.H. = 40 ~ 60%)
Electrical Specifications (T
A
= 25˚C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
* CTR =
2
I
C
x 100%
I
F
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
CTR
V
CE(sat)
t
r
t
f
R
iso
C
f
Min.
–
–
–
–
80
6
2.5
50
–
–
–
5 x 10
10
–
–55˚C to +155˚C
–55˚C to +100˚C
260˚C for 10 s
50 mA
6V
70 mW
50 mA
80 V
6V
150 mW
170 mW
3750 Vrms
Rank Mark
A
B
C
D
CTR (%)
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Conditions
I
F
= 5 mA,
V
CE
= 5 V, T
A
= 25˚C
Typ.
1.2
–
30
–
–
–
–
–
–
4
3
1 x 10
11
0.6
Max.
1.4
10
250
100
–
–
30
600
0.2
18
18
–
1.0
Units
V
µA
pF
nA
V
V
mA
%
V
µs
µs
Ω
pF
Test Conditions
I
F
= 20 mA
V
R
= 4 V
V = 0, f = 1 KHz
V
CE
= 20 V
I
C
= 0.1 mA, I
F
= 0
I
E
= 10
µA,
I
F
= 0
I
F
= 5 mA, V
CE
= 5 V
I
F
= 20 mA, I
C
= 1 mA
V
CC
= 2 V, I
C
= 2 mA
R
L
= 100
Ω
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
60
I
F
– FORWARD CURRENT – mA
P
C
– COLLECTOR POWER DISSIPATION – mW
50
40
30
20
10
0
-55
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
200
6
T
A
= 25°C
5
4
3
2
1
0
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 3 mA
I
C
= 5 mA
I
C
= 7 mA
150
100
50
0
25
50
75
100
125
0
-55
0
25
50
75
100
125
0
5
10
15
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
I
F
– FORWARD CURRENT – mA
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
CTR – CURRENT TRANSFER RATIO – %
500
I
F
– FORWARD CURRENT – mA
200
100
50
20
10
5
2
1
0
200
I
C
– COLLECTOR CURRENT – mA
50
V
CE
= 5 V
T
A
= 25°C
T
A
= 75°C
T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
180
160
140
120
100
80
60
40
20
0
0
I
F
= 30 mA
I
F
= 25 mA
T
A
= 25°C
P
C
(MAX.)
40
I
F
= 20 mA
I
F
= 15 mA
30
20
I
F
= 10 mA
10
I
F
= 5 mA
0.5
1.0
1.5
2.0
2.5
3.0
2
5
10
20
50
0
0
1
2
3
4
5
6
7
8
9
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %
150
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0.10
I
F
= 5 mA
V
CE
= 2 V
100
I
F
= 20 mA
I
C
= 1 mA
0.08
I
CEO
– COLLECTOR DARK CURRENT – nA
10000
V
CE
= 20 V
1000
0.06
100
0.04
50
10
0.02
0
20
0
20
40
60
80
100
40
60
80
100
1
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
3
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
tr
tf
td
ts
VOLTAGE GAIN AV – dB
RESPONSE TIME – µs
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
0
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
10
R
L
= 10 kΩ
R
L
= 1 kΩ
R
L
= 100
Ω
20
0.05 0.1 0.2
0.5
1
2
5
10
0.5 1
2
5 10 20
50 100 200 500
R
L
– LOAD RESISTANCE – kΩ
f – FREQUENCY – kHz
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
Test Circuit for Response Time
V
CC
Test Circuit for Frequency Response
V
CC
R
D
INPUT
R
L
OUTPUT
R
D
R
L
OUTPUT
~
INPUT
OUTPUT
10%
90%
t
d
t
r
t
s
t
f
4
Temperature Profile of Soldering
Reflow
1) One time soldering reflow is
recommended within the
condition of temperature and
time profile shown below.
30 SECONDS
230°C
200°C
180°C
1 MINUTE
25°C
2 MINUTES
1.5 MINUTES
1 MINUTE
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature
on the package of the device
within the condition of (1)
above.
5
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