N x 10 Gbps
Multi-Mode
VCSEL Array
November 2004
Preliminary Datasheet
Mechanical
Solder Pad
Features
•
850nm
wavelength
range
•
High wavelength
uniformity
•
1x4, 1x8 and
1x12 arrays
•
Low threshold
current
•
Data rates Gbps
up to 12.5
480
Die thickness: 200 typ.
Units in
µm
bondable,
•
Flip-chipelectrodes
isolated
•
Ordering information
Part Number
Description
AP-A41-0104-0000 1x4 array
isolated contacts
AP-A41-0108-0000 1x8 array
isolated contacts
AP-A41-0112-0000 1x12 array
isolated contacts
N x 10 Gbps
Multi-Mode
VCSEL Array
Electro-optical characteristics
Parameter*
Symbol
Conditions
(for individual lasers)
Ratings
Units
Min Typ Max
0.5
1
2.5
1.9
840 850 860
1.5
mA
mW
V
nm
nm
mW/mA
32
70
-128
10
°
Ω
dB/Hz
GHz
Threshold current
Optical output power
Operating voltage
Emission wavelength
Spectral bandwidth, RMS
Slope efficiency
Beam divergence
Differential resistance
Relative intensity noise
Bandwidth
I
th
P
out
V
op
λ
∆λ
η
θ
R
Diff
RIN
12
(OMA)
l
op
= 8 mA
l
op
= 8 mA
l
op
= 8 mA
0.35
Full width,
1
/e
2
,
I
op
= 8 mA
l
op
= 8 mA
l
op
= 8 mA
l
op
= 8 mA
28
50
0.45
f
3dB
Thermal characteristics
Parameter
Symbol
Ratings
Min Typ Max
Temperature tuning coefficient
Threshold current variation 0 to+70°C
δλ/δT
∆I
th
0.06
1
nm/K
mA
Units
Absolute maximum ratings
Parameter*
Optical output power
Peak forward current
Electrical power dissipation
Reverse voltage
Operating temperature
Storage temperature
Rating
8
15
30
5
0 to +85
-40 to +
100
Units
mW
mA
mW/laser
V
°C
°C
*(T=25°C unless otherwise noted)
The above specifications are subject to change
without notice
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com