S8550
PNP General Purpose Transistors
* "G" Lead(Pb)-Free
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
Value
-25
-40
-5.0
-500
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 µAdc, IC=0)
Collector Cutoff Current (VCE= -20 Vdc, I B=0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -3.0Vdc, I C=0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
Min
-25
-40
-5.0
-
-
-
Max
-
-
-
-0.2
-0.1
-0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
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S8550
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=- 50 mAdc, VCE=-1.0 Vdc)
DC Current Gain
(IC= -500 mAdc, VCE= 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltage
(IC= -500 mAdc, IB= -50 mAdc)
Current-Gain-Bandwidth Product
(IC= -20 mAdc, VCE=-6.0 Vdc, f=30MHz)
hFE
(1)
hFE
(2)
VCE(sat)
VBE(sat)
fT
85
50
-
-
150
-
-
-
-
300
-
-0.6
-1.2
-
-
Vdc
Vdc
-
-
MHz
Classification of hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
WEITRON
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S8550
WEITRON
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S8550
TO-92 Outline Dimensions
E
unit:mm
C
J
K
G
Dim
A
B
C
D
E
G
H
J
K
L
H
TO-92
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
-
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
B
L
WEITRON
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D
A