2SK1623(L), 2SK1623(S)
Silicon N-Channel MOS FET
ADE-208-1299 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
LDPAK
4
4
1 2
1
D
G
2
3
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1623(L), 2SK1623(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at T
C
= 25°C
Symbol
V
(BR)DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
100
±20
20
80
20
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK1623(L), 2SK1623(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
100
±20
—
—
1.0
—
—
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.065
0.085
16
1300
540
160
12
100
300
150
1.3
300
Max
—
—
±10
250
2.0
0.085
0.12
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Unit
V
V
µA
µA
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V *
1
I
D
= 10 A, V
GS
= 4 V *
1
I
D
= 10 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static Drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
V
GS(off)
R
DS(on)
See characteristic curves of 2SK1302.
3
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
