电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GS81302R18E-167I

产品描述DDR SRAM, 8MX18, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, BGA-165
产品类别存储    存储   
文件大小561KB,共36页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS81302R18E-167I概述

DDR SRAM, 8MX18, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, BGA-165

GS81302R18E-167I规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码BGA
包装说明15 X 13 MM, 1 MM PITCH, BGA-165
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间0.5 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
长度17 mm
内存密度150994944 bit
内存集成电路类型DDR SRAM
内存宽度18
功能数量1
端子数量165
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8MX18
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.5 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15 mm
Base Number Matches1

文档预览

下载PDF文档
Preliminary
GS81302R08/09/18/36E-333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II
Burst of 4 SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Common I/O x36 and x18 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded, A0
and A1 preset an internal 2 bit linear address counter. The
counter increments by 1 for each beat of a burst of four data
transfer. The counter always wraps to 00 after reaching 11, no
matter where it starts.
Common I/O x8 and x9 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded,
the LSBs are internally set to 0 for the first read or write
transfer, and incremented by 1 for the next 3 transfers.
Because the LSBs are tied off internally, the address field of a
x8/x9 SigmaDDR-II B4 RAM is always two address pins less
than the advertised index depth (e.g., the 16M x 9 has a 4M
addressable index).
SigmaDDR™ Family Overview
The GS81302R08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302R08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302R08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
Parameter Synopsis
-333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.01a 6/2010
1/36
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
LC应用电路集锦
LC电路根据电路中电感器L和电容器C的连接方式不同,共有两种基本的LC谐振电路:LC并联谐振电路和LC串联谐振电路。在放大器电路和其它形式的信号处理电路中,大量使用LC并联谐振电路和LC串联谐振 ......
tiankai001 模拟电子
有些垃圾食品可能会改变你的大脑,让你更能吃
在人类中新发现的证据显示含有高脂高糖“垃圾食品”的典型西方饮食能快速破坏大脑对食欲的控制。 狂吃华夫饼、奶昔和类似的高脂食物一周后,澳大利亚的研究人员发现年轻健康的 ......
华工创新 聊聊、笑笑、闹闹
pwm的led调光电路要怎样设计?
我想用单片机来产生pwm波形控制led的调光,那led的驱动电路要怎有设计,有没有好用一点的芯片构成的电路? 求各位大神指点!!!!!!!!!!!...
linkin19 LED专区
LPC2132 IIC难题(三种方式都有问题)请教
最近在写LPC2132 IIC,出现问题。 1. 用周工IIC程序包,不问题,有时可以正常工作有时不行。 2. 用查询方式下就行读写,会死在 while (0x08 != I2C0STAT){ ; // 等待完成start脉冲发送 ......
zhaojun_xf 单片机
FPGA的动态可重构
我刚刚接触FPGA,现在我需要做一个动态可重构,用两个FPGA实现两种算法的动态切换,也就是要用一个控制另一个实现动态重构,我现在只是把这两种逻辑的Verilog代码弄好了,能教教我接下来怎么做 ......
science361 FPGA/CPLD
消费电子将成MEMS最大市场
从2007年到2012年,MEMS市场的年复合增长率将达到14%。为了满足市场需求,MEMS企业和Foundry(晶圆代工厂)都在提高生产制造水平,扩大自己的产能。而MEMS的制造也将从现在的5英寸和6英寸线向8 ......
songbo PCB设计

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1313  868  1562  1412  2897  6  53  45  34  49 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved