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1N5527CUR-1

产品描述Zener Diode, 7.5V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2
产品类别分立半导体    二极管   
文件大小252KB,共2页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
下载文档 详细参数 全文预览

1N5527CUR-1概述

Zener Diode, 7.5V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2

1N5527CUR-1规格参数

参数名称属性值
其他特性METALLURGICALLY BONDED
最大动态阻抗35 Ω
最大电压容差2%
封装主体材料GLASS
封装形状RECTANGULAR
封装形式LONG FORM
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
外壳连接ISOLATED
端子数量2
最大功率耗散0.5 W
二极管类型ZENER DIODE
元件数量1
极性UNIDIRECTIONAL
表面贴装YES
技术AVALANCHE
工作测试电流1 mA
配置SINGLE
二极管元件材料SILICON
标称参考电压7.5 V
JEDEC-95代码DO-213AA
JESD-30 代码R-LELF-R2
JESD-609代码e0
认证状态Not Qualified
最高工作温度200 °C
是否Rohs认证No
Is SamacsysN
YTEOL6.25
Objectid4016698305
包装说明HERMETIC SEALED, GLASS, MLL34, MELF-2
Reach Compliance CodeCompliant
Country Of OriginPhilippines, USA
ECCN代码EAR99

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
– LEADLESS PACKAGE FOR SURFACE MOUNT
– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/437
ZENER DIODE, 500mW
DEVICES
QUALIFIED LEVELS
1N5518BUR-1 Thru 1N5546BUR-1
CDLL5518 Thru CDLL5546D
MAXIMUM RATING AT 25°C
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
Forward Voltage @ 200mA:
-65°C to +175°C
500mW @ T
EC
= +125°C
10mW / °C above T
EC
= +125°C
1.1 volts maximum
And
JAN
JANTX
JANTXV
D
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
NOMINAL
ZENER
VOLTAGE
V
Z
@ I
ZT
(NOTE 2)
VOLTS
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
ZENER
TEST
CURRENT
I
ZT
mA
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAX. ZENER
IMPEDANCE
B-C-D
SUFFIX
Z
ZT
@ I
ZT
(NOTE 3)
Ohms
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
MAXIMUM REVERSE LEAKAGE
CURRENT
I
R
(NOTE 4)
µ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
V
R
= VOLTS
NON &
A-
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
B-C-D-
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
B-C-D
SUFFIX
MAIMUM
DC ZENER
I
ZM
mA
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
REGULATION
FACTOR
CURRENT
V
Z
(NOTE 5)
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
LOW
V
Z
CURRENT
I
ZL
TYPE
NUMBER
(NOTE 1)
G
G1
F
mA
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
S
MILLIMETERS
DIM
D
F
G
G1
S
MIN
1.60
0.41
3.30
MAX
1.70
0.55
3.70
INCHES
MIN
0.063
0.016
.130
MAX
0.067
0.022
.146
2.54 REF.
0.03 MIN
.100 REF.
.001 MIN
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
θ
JEC
):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
θ
JX
):
35°C/W maximum
POLARITY:
Diode to be operated with the banded
(cathode) end positive.
MOUTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE) of this
device is approximately +6PPM/°C. The COE of the
Mounting Surface System should be selected to
provide a suitable match with this device.
NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only V
Z
, I
R
, and V
F
. Units with “A”
suffix are ±10% with guaranteed limits for V
Z
, I
R
, and V
F
. Units with guaranteed limits for all six
parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for
±1.0%.
NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
NOTE 3: Zener impedance is derived by superimposing on I
ZT
A 60Hz rms a.c. current equal to 10% of I
ZT
.
NOTE 4: Reverse leakage currents are measured at V
R
as shown on the table.
NOTE 5:
V
Z
is the maximum difference between V
Z
at I
ZT
and V
Z
at I
ZL
measured with the device junction
in thermal equilibrium.
LDS-0037 Rev. 1 (072304)
Page 1 of 2

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