4 PIN DI PHOT
IP
TOTRAN
NSISTO PHO
OR
OTOCOU
UPLER
EL817 S
E
Series
Schema
atic
Features:
F
•
Current tr
ransfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=
=5V)
•
High isola
ation voltage between inp
e
put
and outpu (Viso=50 V rms )
ut
000
•
Creepage distance >7
e
7.62 mm
•
Operating temperatur up to +110
g
re
0°C
•
Compact small outline package
e
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO a
approved
•
NEMKO a
approved
•
DEMKO a
approved
•
FIMKO approved
•
CSA appr
roved
Pin Configu
uration
1. Anode
2. Cathode
e
3. Emitter
4. Collector
De
escription
n
The EL817 series of de
7
evices each c
consist of an infrared em
n
mitting diodes
s,
optically co
oupled to a p
phototransisto detector.
or
They are p
packaged in a 4-pin DIP p
package and available in wide-lead spacing and S
d
SMD option.
Ap
pplication
ns
•
Programm
mable contro
ollers
•
System a
appliances, m
measuring ins
struments
•
Telecomm
munication equipments
•
Home appliances, suc as fan heaters, etc.
ch
•
Signal tra
ansmission b
between circu of differe potentials and impeda
uits
ent
s
ances
1
Copyright © 2010, Everlight A Rights Reserv
All
ved. Release Da : May 21, 2013. Issue No: DPC
ate
C-0000046 Rev.13
www
w.everlight.c
com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward current
Peak forward current (1us, pulse)
Input
Reverse voltage
Power Dissipation
Symbol
I
F
I
FP
V
R
P
D
Rating
60
1
6
100
2.9
150
Unit
mA
A
V
mW
mW/°C
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Break Down Voltage
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*
1
Operating Temperature
Storage Temperature
Soldering Temperature*
2
P
C
5.8
I
C
V
CEO
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
T
SOL
50
35
6
200
5000
-55 to 110
-55 to 125
260
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*
2 For 10 seconds
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.4
10
250
Unit
V
µA
pF
Condition
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
I
CEO
BV
CEO
BV
ECO
Min
-
35
6
Typ.
-
-
-
Max.
100
-
-
Unit
nA
V
V
Condition
V
CE
= 20V, I
F
= 0mA
I
C
= 0.1mA
I
E
= 0.1mA
Transfer Characteristics
Parameter
EL817
EL817A
Current
Transfer
ratio
EL817B
EL817C
EL817D
EL817X
EL817Y
Collector-Emitter
saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Rise time
Fall time
* Typical values at T
a
= 25°C
CTR
Symbol
Min
50
80
130
200
300
100
150
V
CE(sat)
R
IO
C
IO
fc
t
r
t
f
-
5×10
10
-
-
-
-
Typ.
-
-
-
-
-
-
-
0.1
-
0.6
80
4
3
Max.
600
160
260
400
600
200
300
0.2
-
1.0
-
18
18
V
Ω
pF
kHz
µs
µs
I
F
= 20mA ,I
C
= 1mA
V
IO
= 500Vdc,
40~60% R.H.
V
IO
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100Ω, -3dB
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω
%
I
F
= 5mA ,V
CE
= 5V
Unit
Condition
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 series
Typical Electro-Optical Characteristics Curves
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 series
V
CC
I
F
Input
Pulse
I
C
R
L
Output
Input
R
IN
Output
Pulse
t
r
t
on
Figure 7. Switching Time Test Circuit & Waveforms
10%
90%
t
f
t
off
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13
www.everlight.com
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
