HS-26CT31RH
Data Sheet
August 1999
File Number
2929.2
Radiation Hardened Quad Differential Line
Driver
The Intersil HS-26CT31RH is a quad differential line driver
designed for digital data transmission over balanced lines
and meets the requirements of EIA standard RS-422.
Radiation hardened CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
The HS-26CT31RH accepts TTL signal levels and converts
them to RS-422 compatible outputs. This circuit uses special
outputs that enable the drivers to power down without
loading down the bus. Enable and disable pins allow several
devices to be connected to the same data source and
addressed independently.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95632. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Features
• Electronically Screened to SMD #5962-95632
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened CMOS
• Total Dose Up to 300kRAD(Si)
• Latchup Free
• EIA RS-422 Compatible Outputs (Except for IOS)
• TTL Compatible Inputs
• High Impedance Outputs when Disabled or Powered
Down
• Low Power Dissipation 2.75mW Standby (Max)
• Single 5V Supply
• Low Output Impedance 10Ω or Less
• Full -55
o
C to +125
o
C Military Temperature Range
Pinouts
HS1-26CT31RH (SBDIP) CD1P2-T16
TOP VIEW
Logic Diagram
ENABLE
ENABLE
DIN
CIN
BIN
AIN
AIN 1
AO 2
AO 3
ENABLE 4
BO 5
BO 6
BIN 7
16 VDD
15 DIN
14 DO
13 DO
12 ENABLE
11 CO
10 CO
9 CIN
DO DO
CO CO
BO BO
AO AO
GND 8
Ordering Information
INTERNAL
MKT. NUMBER
HS1-26CT31RH-8
HS9-26CT31RH-8
HS0-26CT31RH-Q
HS1-26CT31RH-Q
HS9-26CT31RH-Q
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
25
-55 to 125
-55 to 125
-55 to 125
-55 to 125
AIN
AO
AO
ENABLE
ORDERING NUMBER
5962F9563201QEC
5962F9563201QXC
5962F9563201V9A
5962F9563201VEC
5962F9563201VXC
HS9-26CT31RH (FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VDD
DIN
DO
DO
ENABLE
CO
CO
CIN
BO
BO
BIN
GND
HS1-26CT31RH/PROTO HS1-26CT31RH/PROTO
HS9-26CT31RH/PROTO HS9-26CT31RH/PROTO
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HS-26CT31RH
Die Characteristics
DIE DIMENSIONS:
96.5 mils x 195 mils x 21 mils
(2450 x 4950)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 10k
Å
±1k
Å
Metallization:
M1: Mo/TiW
Thickness: 5800
Å
M2: Al/Si/Cu (Top)
Thickness: 10k
Å
±1k
Å
Substrate:
AVLSI1RA
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Bond Pad Size:
110µm x 100µm
Metallization Mask Layout
HS26CT31RH
(16) VDD
(16) VDD
(1) AIN
(15) DIN
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
CIN (9)
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
GND (8)
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
2
GND (8)
BIN (7)
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
