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SI4063-B1B-FM

产品描述Telecom Circuit,
产品类别无线/射频/通信    电信电路   
文件大小966KB,共40页
制造商Silicon Laboratories Inc
标准
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SI4063-B1B-FM概述

Telecom Circuit,

SI4063-B1B-FM规格参数

参数名称属性值
是否Rohs认证符合
包装说明QFN-20
Reach Compliance Codecompliant
JESD-30 代码S-XQCC-N20
长度4 mm
功能数量1
端子数量20
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料UNSPECIFIED
封装代码HVQCCN
封装形状SQUARE
封装形式CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
座面最大高度0.9 mm
标称供电电压3.3 V
表面贴装YES
电信集成电路类型TELECOM CIRCUIT
温度等级INDUSTRIAL
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4 mm
Base Number Matches1

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S i 4 0 6 3 /6 0
H
I G H
- P
ERFORMANCE
, L
O W
-C
U R R E N T
T
RANSMITTER
Features
Frequency range = 142–1050 MHz
Modulation

(G)FSK, 4(G)FSK, (G)MSK

OOK
Max output power

+20 dBm (Si4063)

+13 dBm (Si4060)
PA support for +27 or +30 dBm
Ultra low current powerdown modes

30 nA shutdown, 50 nA standby
Data rate = 100 bps to 1 Mbps
Fast wake times
Power supply = 1.8 to 3.6 V
Highly configurable packet handler
TX 64 byte FIFO
Low BOM
Low battery detector
Temperature sensor
20-Pin QFN package
IEEE 802.15.4g compliant
FCC Part 90 Mask D, FCC part 15.247,
15,231, 15,249, ARIB T-108, T-96, T-67,
China regulatory
ETSI Class-I Operation
Applications
Pin Assignments
GPIO3
GPIO2
GND
XIN
17
10
GPIO1
Smart metering
Remote control
Home security and alarm
Telemetry
Garage and gate openers
Remote keyless entry
Home automation
Industrial control
Sensor networks
Health monitors
Electronic shelf labels
SDN
1
20
19
18
NC 2
NC 3
TX 4
NC 5
6
7
TXRamp
8
VDD
9
GPIO0
GND
PAD
Description
Silicon Laboratories' Si406x devices are high-performance, low-current
transmitters covering the sub-GHz frequency bands from 142 to 1050 MHz.
The radios are part of the EZRadioPRO
®
family, which includes a complete
line of transmitters, receivers, and transceivers covering a wide range of
applications. All parts offer extremely low active and standby current
consumption. The Si406x includes optimal phase noise performance for
narrow band applications, such as FCC Part90 and 169 MHz wireless Mbus.
The Si4063 offers exceptional output power of up to +20 dBm with
outstanding TX efficiency. The high output power allows extended ranges and
highly robust communication links. The Si4060 active mode TX current
consumption of 18 mA at +10 dBm coupled with extremely low standby
current and fast wake times ensure extended battery life in the most
demanding applications. The Si4063 can achieve up to +27 dBm output
power with built-in ramping control of a low-cost external FET. The devices
are compliant with all worldwide regulatory standards: FCC, ETSI, and ARIB.
All devices are designed to be compliant with 802.15.4g and WMbus smart
metering standards.
Patents pending
Rev 0.1 12/12
Copyright © 2012 by Silicon Laboratories
VDD
XOUT
16
15 nSEL
14 SDI
13 SDO
12 SCLK
11 nIRQ
Si4063/60

 
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