204-74-74-561
Quadrant LAAPD Array
The 204-74-74-561 is a highly sensitive 4-element array photodetector, built on the
basis of the API proprietary Large Area Avalanche Photodiode technology. Advanced
micromachining techniques have been implemented for the element pixelization, thus
producing highly stable and uniform devices. The array is housed in a rugged,
hermetically sealed metal package designed to perform in industrial applications as well
as laboratory and clinical environments.
The device offers a unique combination of a large area, high gain photodetector
and extremely low noise pixel performance. This combination makes it a perfect choice
for all applications requiring highly sensitive low-level signal detection with emphasis
on spatially sensitive instrumentation.
The device is ideally suited for high precision applications, including analytical
chemistry, fluorescence spectrophotometry and lifetime measurements, medical
diagnostic, scintillation detection, radiation monitoring, color image scanning, low-level
light pulse counting, laser ranging, position sensing, and many others. The integrated
structure of the array offers performance unmatched by any existing discrete detectors
and in certain applications can successfully compete with position sensitive
photomultipliers.
In addition to standard characteristic, the devices can be custom tailored to match
desired spectral or mechanical requirements.
Features
Total active area 21 mm
2
Four 5.3mm
2
pixels
Operating gain of 200
Responsivity up to 90 A/W
Low dark current and noise
Excellent time response
•
Rugged, compact package
•
Wide operating temp range
•
•
•
•
•
•
Applications
•
Laser Ranging & Guidance
•
Position Sensing
•
Analytical Instrumentation
Electro-Optical Characteristics
@ +23°C and gain 200, unless otherwise noted
Total Active Area
Single Pixel Active Area
Pitch
Linear Fill Factor
Gain Variation Pixel-to-Pixel
DC Interpixel Crosstalk
Bias Voltage Range
1
Temperature Coefficient of Bias @ M=const
Operating Gain
Responsivity @ 500nm
Pixel capacitance @ 100kHz
Pixel dark Current
Pixel Dark Noise Spectral Density @ f=10kHz
Pixel Rise Time @
λ
= 675nm, R
l
= 50Ω
1
21.2 mm
2
2.3 x 2.3 mm (5.3 mm
2
)
2.35 mm
90% typ.
+/-2.5% typ.
1% typ.
-1700 to –2000V
+0.1%/°C typ.
20 to 200
70A/W typ
6pF typ
4nA typ
0.7pA/√Hz typ
6ns typ
The maximum operating high voltage is specified with each device.
Absolute Maximum Ratings*
Gain
Power Dissipation per Element
Operating Temperature
Storage Temperature
Lead Temperature
250
0.1W
-55°C to +°40C
-55°C to +70°C
+300°C (soldering, 5 sec)
*Operating beyond these limits may cause permanent damage to the device.
Typical Performance Graphs
Effective Quantum Efficiency @ M=200
100
100
Spectral Responsivity @ M=200
Responsivity (A/W)
Effective QE (%)
80
60
40
20
0
300
80
60
40
20
0
300
400
500
600
700
800
900
1000
1100
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
Pixel Gain and Dark Current vs. Bias
1000
Gain Surface Scan
100.0
Total Bias Current
Pixel Gain
250
200
150
Pixel 1
Pixel 2
100
10.0
Dark Current (nA)
Gain
Gain
100
50
0
-3.50
10
1.0
Pixel Dark Current
1
1500
1600
1700
1800
1900
0.1
2000
-2.50
-1.50
-0.50
0.50
1.50
2.50
3.50
Bias Voltage (V)
Position (mm)
MECHANICAL DIMENSIONS, SCHEMATIC AND PIN-OUT
API reserves the right to change specifications without notification.
1240 Avenida Acaso, Camarillo, CA 93012
(805) 987-0146
●
Fax (805) 484-9935
www.advancedphotonix.com
Rev. 16 Feb, 2001
Preliminary
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