VN0109 E –
SOLET
– OB
N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BV
DSS
/ R
DS(ON)
I
D(ON)
BV
DGS
(max) (min)
40V
60V
90V
3.0Ω
3.0Ω
3.0Ω
2.0A
2.0A
2.0A
Order Number / Package
TO-39
—
—
VN0109N2
TO-52
—
—
VN0109N9
TO-92
VN0104N3
VN0106N3
VN0109N3
TO-220
—
—
VN0109N5
Quad P-DIP**
VN0104N6
VN0106N6
—
VN0104
VN0106
VN0109
Quad C-DIP*
—
VN0106N7
—
Die
†
VN0104ND
VN0106ND
VN0109ND
7
*
14 pin side brazed ceramic DIP
**14 pin plastic DIP
†
MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
■
Free from secondary breakdown
■
Low power drive requirement
■
Ease of paralleling
■
Low C
ISS
and fast switching speeds
■
Excellent thermal stability
■
Integral Source-Drain diode
■
High input impedance and high gain
■
Complementary N- and P-channel devices
Package Options
Applications
■
Motor controls
■
Converters
■
Amplifiers
■
Switches
■
Power supply circuits
■
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
G
D S
DGS
DGS
TO-39
Case: DRAIN
TO-52
Case: DRAIN
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
7-151
SGD
TO-220
TAB: DRAIN
TO-92
Note 1: See Package Outline section for dimensions.
Note 2: See Array section for quad pinout.
14-Lead DIP
VN0104/VN0106/VN0109
Thermal Characteristics
Package
TO-39
TO-52
TO-92
TO-220
Plastic DIP
Ceramic DIP
I
D
(continuous)*
0.8A
0.5A
0.5A
1.5A
I
D
(pulsed)
2.5A
2.0A
2.0A
2.5A
Power Dissipation
@ T
C
= 25
°
C
3.5W
1.0W
1.0W
15.0W
θ
jc
°
C/W
35
125
125
8
θ
ja
°
C/W
125
170
170
70
I
DR
*
0.8A
0.5A
0.5A
1.5A
I
DRM
2.5A
2.0A
2.0A
2.5A
N0109 –
V
SOLETE
– OB
Electrical Characteristics
(@ 25°C unless otherwise specified)
See DMOS Arrays & Special Functions section
* I
D
(continuous) is limited by max rated T
j
.
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
VN0109
VN0106
VN0104
Min
90
60
40
0.8
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
2.4
-3.8
-5.5
100
1
100
V
mV/°C
nA
µA
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.5
2.0
1.0
2.5
3.0
2.5
0.70
5.0
3.0
1
65
25
8
5
8
9
8
1.8
A
Ω
%/°C
m
300
450
55
20
5
3
5
6
5
1.2
400
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-152
Ω
V
DD
= 25V
I
D
= 1A
R
GEN
= 25Ω
V
GS
= 0V, I
SD
=1.0A
V
GS
= 0V, I
SD
=1.0A
V
DD
R
L
OUTPUT
D.U.T.
VN0104/VN0106/VN0109
Typical Performance Curves
Output Characteristics
2.5
VGS =10V
8V
N0109 –
V
SOLETE
– OB
2.5
2.0
Saturation Characteristics
V
GS
= 10V
2.0
8V
I
D
(amperes)
I
D
(amperes)
1.5
6V
1.0
1.5
6V
1.0
0.5
4V
0.5
4V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
7
V
DS
(volts)
Transconductance vs. Drain Current
1.0
25
V
DS
(volts)
Power Dissipation vs. Case Temperature
0.8
V
DS
= 25V
20
G
FS
(siemens)
25°C
0.4
P
D
(watts)
0.6
T
A
= -55°C
15
TO-220
125°C
10
0.2
5
TO-39
TO-92/TO-52
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
TO-39 (pulsed)
TO-220 (DC)
T
C
(°C)
Thermal Response Characteristics
TO-220
P
D
= 15W
T
C
= 25°C
Thermal Resistance (normalized)
0.8
I
D
(amperes)
1.0
TO-39 (DC)
TO-52/TO-92 (DC)
0.6
TO-39
P
D
= 3.5W
T
C
= 25°C
0.4
0.1
0.2
TC = 25°C
0.01
0.1
1.0
10
100
0
0.001
0.01
0.1
TO-92
P
D
= 1W
T
C
= 25°C
1
10
V
DS
(volts)
t
p
(seconds)
7-153
N0109 –
V
Typical Performance Curves
OLETE
– OBS
BV
DSS
Variation with Temperature
5.0
1.1
4.0
VN0104/VN0106/VN0109
On-Resistance vs. Drain Current
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
3.0
V
GS
= 10V
1.0
2.0
1.0
0.9
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
T
j
(°C)
Transfer Characteristics
2.5
1.6
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.9
V
DS
= 25V
2.0
T
A
= -55°C
25°C
1.4
1.6
1.5
1.2
1.3
125°C
1.0
V
(th)
@ 1mA
R
DS
@ 5V, 0.25A
1.0
1.0
0.5
0.8
0.7
0
0
2
4
6
8
10
0.6
-50
0
50
100
0.4
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
75
V
DS
= 10V
40V
C (picofarads)
V
GS
(volts)
6
50
C
ISS
80 pF
4
25
C
OSS
C
RSS
2
40 pF
0
40
0
0.2
0.4
0.6
0.8
1.0
0
0
10
20
30
V
DS
(volts)
Q
G
(nanocoulombs)
7-154
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
R
DS
@ 10V, 1.0A
I
D
(amperes)
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