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1.5KE68C

产品描述Trans Voltage Suppressor Diode, 1500W, 55.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE
产品类别分立半导体    二极管   
文件大小347KB,共4页
制造商Galaxy Semi-Conductor Co Ltd
标准
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1.5KE68C概述

Trans Voltage Suppressor Diode, 1500W, 55.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE

1.5KE68C规格参数

参数名称属性值
ECCN代码EAR99
Is SamacsysN
Country Of OriginMainland China
包装说明O-PALF-W2
Reach Compliance CodeUnknown
YTEOL6.16
Objectid1221185096
其他特性EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压74.8 V
最大非重复峰值反向功率耗散1500 W
最小击穿电压61.2 V
最大钳位电压98 V
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
极性BIDIRECTIONAL
表面贴装NO
击穿电压标称值68 V
配置SINGLE
元件数量1
最大功率耗散6.5 W
最大重复峰值反向电压55.1 V
技术AVALANCHE
端子位置AXIAL
外壳连接ISOLATED
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
端子形式WIRE
JEDEC-95代码DO-201AE
JESD-30 代码O-PALF-W2
最低工作温度-50 °C
峰值回流温度(摄氏度)260
最高工作温度175 °C
是否Rohs认证Yes

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BL
FEATURES
GALAXY ELECTRICAL
1.5KE6.8 - -
-
1.5KE550CA
BREAKDOWN VOLTAGE: 6.8 ---
550
V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
underwriters laboratory
flammability classification
94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,I
D
are typically less than
5.0μA
/ 10 seconds,
High temperature soldering guaranteed:265
DO-27S
0.375"(9.5mm) lead length, 5Ibs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-27S, molded plastic
Polarity:
color
band denotes positive end
( cathode ) except for bidirectional
Weight:
0.032 ounces, 0.9 grams
Mounting position:
any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1.5KE 6.8 thru types 1.5KE
550
(e.g.
1.5KE
6.8CA,
1.5KE
550CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak
pow
er
dissipation
w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak
pulse current
w ith a 10/1000μs w aveform (NOTE 1)
Steady
state pow
er
dissipation
at T
L
=75
fffffLead
lengths
0.375"(9.5mm) (NOTE 2)
Peak
forw
ard
surge current,
8.3ms
single
half
ffffSine-wave
superimposed
on
rated load
(JEDEC Method) (NOTE 3)
Maximum
instantaneous
forw
ard
voltage
at
100.0A
for unidirectional only (NOTE 4)
Operating
junction
and
storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6
.5
UNIT
W
A
W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
200.0
3.5/5.0
-50---+150
A
V
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number
1685003C
BL
GALAXY ELECTRICAL
1.

 
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