SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 3 – MARCH 2005
PARTMA RKING DETAIL –
BCX71G – BG
BCX71H – BH
BCX71J – BJ
BCX71K – BK
BCX71GR – CG
BCX71HR – 6P
BCX71JR – J8
BCX71KR – CK
BCX71
E
C
B
ABSOLUTE MA XIMU M RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitte r-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
B
P
TOT
T
j
:T
stg
+V
BB
SOT23
VALUE
-45
-45
-5
-200
-50
330
-55 to +150
V
CC
(-10V)
UNIT
V
V
V
mA
mA
mW
°C
SW ITCHI NG CI RCUI T
R
2
1
µ
s
-10V
t
r
<5nsec
Mark/S pace ra tio < 0.01
Z
S
= 50
Ω
50
Ω
R
1
R
L
BAY63
t
r
< 5nsec
Z
in
>100k
Ω
Oscilloscope
FOUR TERMINAL NETWORK DATA (I
C
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G
h
FE
Group F
h
FE
Group
Min. Typ. Max. Min. Typ Max. Min. Typ
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
1.5
2
2
200
260
330
18
30
24
50
30
J
h
FE
Group K
Max. Min. Typ Max.
8.5
4.5
7.5
12
K
3
10
-4
520
60
50
100
µ
s
h
11e
h
12e
h
21e
h
22e
Spic e param eter data is available up on reques t for th is dev ice
BCX71
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
-0.60
-0.68
-0.6
120
60
30
180
80
40
250
100
100
380
110
f
T
C
ebo
C
cbo
N
2
-0.12
-0.25
-0.70
-0.80
-0.55
-0.65
-0.72
140
170
200
250
270
350
340
500
180
11
6
6
MIN.
-45
-5
-20
-20
-20
-0.25
-0.55
-0.85
-1.05
-0.75
220
310
460
630
MHz
pF
pF
dB
TYP.
MAX.
UNIT
V
V
µ
A
CONDITIONS.
I
CEO
=-2mA
I
EBO
=-1
µ
A
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter Cut-off
Current
Emitter-Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
Static
Forward
Current
Transfer
Ratio
nA
nA
V
V
V
V
V
V
V
V
CES
=-45V
V
CES
=-45V ,T
amb
=150
o
C
V
EBO
=-4V
I
C
=-10mA,I
B
= -0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10mA, V
CE
= -5V
f = 100MHz
V
EBO
= -0.5V,f =1MHz
V
CBO
= -10V, f =1MHz
I
C
=- 0.2mA, V
CE
=- 5V
R
G
=2K
Ω,
f=1KHz
∆
f=200Hz
-I
C
: I
B1
: - I
B2
=10:1:1mA
R
1
=R
2
=5K
Ω
V
BB
=-3.6V, R
L
=990
Ω
BCX71G
BCX71H
h
FE
BCX71J
BCX71K
Transition Frequency
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
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