BFP720F
NPN Silicon Germanium RF Transistor
Target data sheet
•
High gain ultra low noise RF transistor
for low current operation
•
Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
•
Optimum gain and noise figure
at low current operation
•
Ideal for WLAN applications
•
Outstanding noise figure
F
= 0.5 dB at 1.8 GHz
Outstanding noise figure
F
= 0.75 dB at 6 GHz
•
High maximum stable and available gain
G
ms
= 26 dB at 1.8 GHz,
G
ma
= 20.5 dB at 6 GHz
•
150 GHz
f
T
-Silicon Germanium technology
•
Pb-free (RoHS compliant) package
4
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP720F
Marking
Pin Configuration
R9s
1=B 2=E 3=C 4=E -
Package
-
TSFP-4
2008-07-04
1
BFP720F
Maximum Ratings
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
V
4
3.5
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
tbd
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
jo
T
jstg
Symbol
R
thJS
13
13
1.2
20
2
80
-65 ... 150
-65 ... 150
Value
≤
tbd
Unit
mA
mW
°C
Operating junction temperature range
Storage junction temperature range
Thermal Resistance
Parameter
Junction - soldering point
2)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain-
I
C
= 13 mA,
V
CE
= 3 V, pulse measured
1
T
Unit
max.
-
30
100
2
400
V
µA
nA
µA
-
typ.
4.7
-
-
-
250
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
160
S
is measured on the collector lead at the soldering point to the pcb
2
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2008-07-04
2
BFP720F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 13 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
based grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 5 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain
1)
I
C
= 13 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 13 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 13 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 10 mA,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1dB Compression point
I
C
= 13 mA,
V
CE
= 3 V,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1
G
-
-
45
0.06
-
-
GHz
pF
C
cb
C
ce
-
0.3
-
C
eb
-
0.3
-
NF
-
-
G
ms
-
0.5
0.75
26
-
-
-
dB
dB
G
ma
-
20.5
-
dB
|S
21e
|
2
-
-
IP
3
P
-1dB
-
-
24.5
16
20.5
6
-
-
-
-
dB
dBm
1/2
ma = |
S
21e /
S
12e| (k-(k²-1) ),
G
ms = |
S
21e /
S
12e |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
2008-07-04
3
Package TSFP-4
BFP720F
Package Outline
1.4
±0.05
0.2
±0.05
1.2
±0.05
0.2
±0.05
4
3
1
2
0.2
±0.05
0.5
±0.05
0.5
±0.05
0.15
±0.05
Foot Print
0.35
0.45
0.5
0.5
Marking Layout (Example)
Manufacturer
0.9
Pin 1
BFP420F
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
1.4
8
Pin 1
1.55
0.7
10˚ MAX.
0.8
±0.05
0.55
±0.04
2008-07-04
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BFP720F
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2008-07-04
5
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