G -LINK
GLT441L04
1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Feb. 2004 (Rev. 1.1)
Features :
∗
∗
∗
∗
1,048,576 words by 4 bits organization.
Fast access time and cycle time
Low power dissipation.
Read-Modify-Write,
RAS
-Only Refresh,
CAS
-Before-
RAS
Refresh, Hidden Refresh.
Description :
The GLT441L04 is a high-performance
CMOS dynamic random access memory
containing 4,194,304 bits organized in a x4
configuration. The GLT4161L04 has 10 row
and 10 column-addresses, and accepts 1024-
cycle refresh in 16 ms.
The GLT441L04 provides FAST PAGE
MODE operation which allows for fast data
access within a row-address defined
boundary, up to 1024 x 4 bits with cycle times
as short as 35ns.
∗
1,024 refresh cycles per 16ms.
∗
Available in 300 mil 26(20) TSOPII,300mil
26(20) SOJ.
∗
3.3V±0.3V Vcc Power Supply voltage
.
∗
All inputs and Outputs are LVTTL
compatible.
∗
FAST
PAGE access cycle.
∗
Self-refresh Capability
.
HIGH PERFORMANCE
Max.
RAS
Access Time, (t
RAC
)
Max. Column Address Access Time, (t
AA
)
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
Max.
CAS
Access Time (t
CAC
)
50
50 ns
25 ns
35 ns
90 ns
13 ns
60
60 ns
30 ns
40 ns
110 ns
15 ns
70
70 ns
35 ns
45 ns
130 ns
20 ns
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-1-
G -LINK
GLT441L04
1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Feb. 2004 (Rev. 1.1)
Pin Configuration :
GLT441L04
300mil 26(20) SOJ
DQ
0
DQ
1
WE
RAS
A
9
1
2
3
4
5
20
19
18
17
16
V
SS
DQ
3
DQ
2
CAS
OE
GLT441L04
300mil 26(20) TSOPII
DQ
0
DQ
1
WE
RAS
A
9
1
2
3
4
5
20
19
18
17
16
V
SS
DQ
3
DQ
2
CAS
OE
A
0
A
1
A
2
A
3
V
CC
6
7
8
9
10
15
14
13
12
11
A
8
A
7
A
6
A
5
A
4
A
0
A
1
A
2
A
3
V
CC
6
7
8
9
10
15
14
13
12
11
A
8
A
7
A
6
A
5
A
4
Pin Descriptions:
Name
A
0
– A
9
RAS
CAS
WE
OE
Function
Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Inputs / Outputs
+3.3V Power Supply
Ground
No Connection
DQ
0
- DQ
3
V
CC
V
SS
NC
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-2-
G -LINK
GLT441L04
1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Feb. 2004 (Rev. 1.1)
Absolute Maximum Ratings*
Capacitance*
T
A
=25°C, V
CC
=3.3V±0.3V, V
SS
=0V
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS, CAS, WE, OE
Data Input/Output
Max.
5
7
7
Unit
pF
pF
pF
Operating Temperature, T
A
(ambient)
..............................................0°C to +70°C
Storage Temperature(plastic).........-55°C to +150°C
Voltage Relative to V
SS
.................….-0.5V to + 4.6V
Short Circuit Output Current............................20mA
Power Dissipation.............................................1.0W
*Note: Operation above Absolute Maximum Ratings can
aversely affect device reliability.
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
All voltages are referenced to GND.
After power up, wait more than 200µs and then, execute eight
CAS
-before-
RAS
or
RAS
-only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
WE
CAS
4
DATA-IN
BUFFER
DQ
0
DQ
1
DQ
2
DQ
3
NO.2 CLOCK
GENERATOR
DATA-OUT
BUFFER
4
4
OE
COLUMN-
ADDRESS
BUFFER
10
COLUMN
DECODER
1024
REFRESH
CONTROLLER
SENSE AMPLIFIERS
I/O GATING
4
10
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
10
REFRESH
COUNTER
1024
ROW
ADDRESS
BUFFERS
ROW DECODER
10
1024
1024 x 1024 x 4
MEMORY
ARRAY
RAS
NO.1 CLOCK
GENERATOR
V
DD
V
SS
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-3-
G -LINK
GLT441L04
1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Feb. 2004 (Rev. 1.1)
Truth Table:
Function
Standby
READ
EARLY WRITE
READ WRITE
FAST-PAGE-MODE
READ
FAST-PAGE-MODE
EARLY-WRITE
FAST-PAGE-MODE
READ-WRITE
RAS
-ONLY REFRESH
RAS
H
L
L
L
1st Cycle
2nd cycle
1st Cycle
2nd cycle
1st Cycle
2nd cycle
L
L
L
L
L
L
L
READ
WRITE
L→H→L
L→H→L
H→L
H→L
CAS
H→X
L
L
L
H→L
H→L
H→L
H→L
H→L
H→L
H
L
L
L
L
WE
X
H
L
H→L
H
H
L
L
H→L
H→L
X
H
L
H
H
OE
X
L
X
L→H
L
L
X
X
L→H
L→H
X
L
X
X
X
ADDRESS
t
R
t
C
X
ROW
ROW
ROW
ROW
n/a
ROW
n/a
ROW
n/a
ROW
ROW
ROW
X
X
X
COL
COL
COL
COL
COL
COL
COL
COL
COL
n/a
COL
COL
X
X
DATA-IN/OUT
DQ1-DQ4
High-Z
Data-Out
Data-In
Data-Out,Data-In
Data-Out
Data-Out
Data-In
Data-In
Data-Out,Data-In
Data-Out,Data-In
High-Z
Data-Out
Data-In
High-Z
High-Z
HIDDEN REFRESH
CBR REFRESH
SELF REFRESH
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-4-
G -LINK
GLT441L04
1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Feb. 2004 (Rev. 1.1)
DC and Operating Characteristics (1-2)
T
A
= 0°C to 70°C, V
CC
=3.3V±0.3V, V
SS
=0V, unless otherwise specified.
Sym.
I
LI
Parameter
Input Leakage Current
(any input pin)
Output Leakage Current
(for High-Z State)
Operating Current,
Random READ/WRITE
Standby Current
Refresh Current,
RAS -Only
Test Conditions
0V
≤
V
IN
≤
V
CC
+0.3V
(All other pins not under
test=0V)
0V
≤
V
out
≤
V
CC
Output is disabled (Hiz)
t
RC
= t
RC
(min.)
Access
Time
Min.
-5
Typ
Max.
+5
Unit Notes
µA
I
LO
I
CC1
-5
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
+5
90
80
70
1
µA
1,2
mA
I
CC2
I
CC3
RAS , CAS at V
IH
other inputs
≥V
SS
RAS cycling, CAS at V
IH
t
RC
= t
RC
(min.)
RAS at V
IL
, CAS address
cycling:t
PC
=t
PC
(min.)
RAS , CAS address
cycling: t
RC
=t
RC
(min.)
RAS
≥V
CC
-0.2V,
CAS
≥V
CC
-0.2V,
All other inputs V
SS
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
mA
2
mA
1,2
mA
mA
2
I
CC4
Operating Current,
FAST Page Mode
Refresh Current,
CAS Before RAS
I
CC5
90
80
70
90
70
60
90
80
70
300
I
CC6
Standby Current, (CMOS)
µA
I
CC7
Self refresh Current
RAS = CAS =0.2V,
WE = OE = A
0
~A
10
=V
CC
-
0.2V or 0.2V
DQ
0
~DQ
3
=V
CC
-0.2V,0.2V
or Open
-0.3
2.0
I
OL
= 2mA
I
OH
= -2mA
2.4
300
µA
V
IL
V
IH
V
OL
V
OH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
+0.8
V
CC
+0.3
0.4
V
V
V
V
3
4
Notes:
1. I
CC
is dependent on output loading when the device output is selected. Specified I
CC
(max.) is measured with the output
open.
2. I
CC
is dependent upon the number of address transitions specified ICC(max.) is measured with a maximum of one
transition per address cycle in random Read/Write and EDO Fast Page Mode.
3. Specified V
IL
(min.) is steady state operation. During transitions V
IL
(min.) may undershoot to –0.9V for a period not to
exceed 10ns. All AC parameters are measured with V
IL
(min.)≥V
SS
and V
IH
(max.)≤V
CC
.
4. Specified V
IH
(max.) is steady state operation . During transitions V
IH
(max.) may overshoot to V
CC
+0.9V for a period not to
exceed 10ns. All AC parameters are measured with V
IL
(min.)
≥
V
SS
and VIH(max.)
≤
V
CC
.
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-5-
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