Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
*As
per JEDEC51 standard.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V+ = VL = 5.2V or V+ = 5.5V to 23V, EN_ = VL, SYNC = GND, I
VL
= 0mA, PGND = SGND, C
BYPASS
= 0.22µF, C
VL
= 4.7µF (ceramic),
R
OSC
= 10kΩ (circuit of Figure 1), T
A
= T
J
= T
MIN
to T
MAX
, unless otherwise noted.) (Note 1)
PARAMETER
SYSTEM SPECIFICATIONS
Input Voltage Range
Operating Supply Current
V+
I
Q
I
STBY
SYMBOL
(Note 2)
VL = V+
CONDITIONS
MIN
5.5
4.5
TYP
MAX
23.0
5.5
UNITS
V
mA
VL unloaded, no switching, V
FB_
= 1V,
V+ = 12V, R
OSC
= 60kΩ
EN_ = 0, PGOOD_ floating, V+ = 12V,
R
OSC
= 60kΩ (MAX5073ETI)
EN_ = 0, PGOOD_ floating, V+ = 12V,
R
OSC
= 60kΩ (MAX5073ATI)
V
OUT1
= 3.3V at 1.5A,
V
OUT2
= 2.5V at 0.75A
(f
SW
= 1.25MHz)
V+ = VL = 5V
V+ = 12V
V+ = 16V
2.2
0.6
0.6
82
80
78
4
1.2
V+ Standby Supply Current
mA
1.4
Efficiency
STARTUP/VL REGULATOR
VL Undervoltage Lockout Trip
Level
VL Undervoltage Lockout
Hysteresis
VL Output Voltage
BYPASS OUTPUT
η
%
UVLO
VL falling
3.95
4.1
175
4.25
V
mV
VL
V+ = 5.5V to 23V, I
SOURCE
= 0 to 40mA
I
BYPASS
= 0, R
OSC
= 60kΩ (MAX5073ETI)
I
BYPASS
= 0, R
OSC
= 60kΩ (MAX5073ATI)
0 ≤ I
BYPASS
≤ 50µA, R
OSC
= 60kΩ
4.9
1.98
1.975
0
5.2
2.00
2.00
2
5.5
2.02
2.025
10
V
BYPASS Voltage
BYPASS Load Regulation
SOFT-START
Digital Ramp Period
Soft-Start Steps
V
BYPASS
∆V
BYPASS
V
mV
f
OSC
clock
cycles
Steps
Internal 6-bit DAC
2048
64
www.maximintegrated.com
Maxim Integrated
│
2
MAX5073
2.2MHz, Dual-Output Buck or Boost Converter
with Internal Power MOSFETs
Electrical Characteristics (continued)
(V+ = VL = 5.2V or V+ = 5.5V to 23V, EN_ = VL, SYNC = GND, I
VL
= 0mA, PGND = SGND, C
BYPASS
= 0.22µF, C
VL
= 4.7µF (ceramic),
R
OSC
= 10kΩ (circuit of Figure 1), T
A
= T
J
= T
MIN
to T
MAX
, unless otherwise noted.) (Note 1)
PARAMETER
VOLTAGE-ERROR AMPLIFIER
FB_ Input Bias Current
FB_ Input Voltage Set Point
I
B(EA)
0°C ≤ T
A
≤ +70°C
-40°C
≤
T
A
≤
+85°C
SYMBOL
CONDITIONS
MIN
TYP
MAX
250
UNITS
nA
V
0.792
0.788
0.788
1.25
1.2
1.2
0.8
0.8
0.8
2
2
2
0.808
0.812
0.812
2.70
2.9
2.9
mS
-40°C ≤ T
J
≤ +125°C (MAX5073ATI only)
FB_ to COMP_
Transconductance
0°C to +85°C
g
M
40°C to +85°C
-40°C to +125°C (MAX5073ATI only)
I
SWITCH
= 100mA,
V
BST1
/V
DD1
to V
SOURCE1
= 5.2V
(MAX5073ETI)
I
SWITCH
= 100mA,
V
BST
1/V
DD1
to V
SOURCE1
= 5.2V
(MAX5073ATI)
I
SWITCH
= 100mA,
V
BST1
/V
DD1
to V
SOURCE1
= 4.5V
(MAX5073ETI)
I
SWITCH
= 100mA,
V
BST1
/V
DD1
to V
SOURCE1
= 4.5V
(MAX5073ATI)
I
SWITCH
= 100mA,
V
BST2
/V
DD2
to V
SOURCE2
= 5.2V
I
SWITCH
= 100mA,
V
BST2
/V
DD2
to V
SOURCE2
= 4.5V
V
OUT1
= 3.3V, V+ = 12V (Note 3)
V
OUT2
= 2.5V, V+ = 12V (Note 3)
EN1 = 0V, V
DS
= 23V
EN2 = 0V, V
DS
= 23V
INTERNAL PMOSFETS
195
290
195
330
mΩ
On-Resistance Converter 1
R
ON1
On-Resistance Converter 2
R
ON2
330
350
2
1
630
690
mΩ
Minimum Converter 1 Output
Current
Minimum Converter 2 Output
Current
Converter 1 MOSFET Leakage
Current
Converter 2 MOSFET Leakage
Current
INTERNAL SWITCH CURRENT LIMIT
I
OUT1
I
OUT2
I
LK1
I
LK2
A
A
10
10
µA
µA
Current-Limit Converter 1
Current-Limit Converter 2
I
CL1
I
CL2
V+ = 12V (MAX5073ETI)
V+ = 12V (MAX5073ATI)
MAX5073ETI
MAX5073ATI
2.3
2.3
1.38
1.38
3
3
1.8
1.8
4.3
4.6
2.10
2.20
A
A
www.maximintegrated.com
Maxim Integrated
│
3
MAX5073
2.2MHz, Dual-Output Buck or Boost Converter
with Internal Power MOSFETs
Electrical Characteristics (continued)
(V+ = VL = 5.2V or V+ = 5.5V to 23V, EN_ = VL, SYNC = GND, I
VL
= 0mA, PGND = SGND, C
BYPASS
= 0.22µF, C
VL
= 4.7µF (ceramic),
R
OSC
= 10kΩ (circuit of Figure 1), T
A
= T
J
= T
MIN
to T
MAX
, unless otherwise noted.) (Note 1)
PARAMETER
INTERNAL OSCILLATOR/SYNC
Maximum Duty Cycle
Switching Frequency Range
Switching Frequency
Switching Frequency Accuracy
SYNC Frequency Range
SYNC High Threshold
SYNC Low Threshold
SYNC Input Min Pulse Width
SYMBOL
CONDITIONS
SYNC = SGND, f
SW
= 1.25MHz
SYNC = SGND, f
SW
= 2.2MHz
Each converter
R
OSC
= 10kΩ, each converter
5.6kΩ ≤ R
OSC
≤ 56kΩ, 1% each converter
SYNC input frequency is twice the
individual converter frequency
MIN
84
84
200
1125
-15
400
2.4
TYP
86
86
1250
MAX
95
95
2200
1375
+15
4400
UNITS
D
MAX
f
SW
f
SET
f
SYNC
V
SYNCH
V
SYNCL
t
SYNCIN
CLKOUT
PHASE
%
kHz
kHz
%
kHZ
V
0.8
100
R
OSC
= 60kΩ, 1%, with respect to
converter 2 / SOURCE2 waveform
45
45
4
0.4
2.4
1.8
1.2
0.8
250
PGOOD goes high after V
OUT
crosses
PGOOD_ threshold
I
SINK
= 3mA (MAX5073ETI)
I
SINK
= 3mA (MAX5073ATI)
V
ns
degrees
degrees
V
V
V
V
nA
Clock Output Phase Delay
SYNC to SOURCE1 Phase
Delay
Clock Output High Level
Clock Output Low Level
EN_ INPUTS
SYNC
PHASE
R
OSC
= 60kΩ, 1%
V
CLKOUTH
V
CLKOUTL
V
IH
V
IL
I
B(EN)
VL = 5.2V, sourcing 5mA
VL = 5.2V, sinking 5mA
V+ = VL = 5.2V
V+ = VL = 5.2V
EN_ Input High Threshold
EN_ Input Low Threshold
EN_ Bias Current
POWER-GOOD OUTPUT (PGOOD_)
PGOOD_ Threshold
PGOOD_ Output Voltage
PGOOD_ Output Leakage
Current
THERMAL MANAGEMENT
Thermal Shutdown
Thermal Hysteresis
PGOOD
VTH_
V
PGOOD_
90
92.5
95
0.4
0.52
1
%V
OUT
V
µA
V+ = VL = 5.2V, V
PGOOD_
= 23V,
ILKPGOOD_
V
FB_
= 1V
T
SHDN
T
HYST
Junction temperature
Junction temperature
+150
30
°C
°C
Note 1:
Specifications at -40°C are guaranteed by design and not production tested.
Note 2:
Operating supply range (V+) is guaranteed by VL line regulation test. Connect V+ to VL for 5V operation.
Note 3:
Output current may be limited by the power dissipation of the package, refer to the
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