TB6643KQ
TOSHIBA Bi-CMOS Integrated Circuit
Silicon Monolithic
TB6643KQ
Full-Bridge DC Motor Driver IC
The TB6643KQ is a full-bridge DC motor driver IC employing
the MOS process for output power transistors.
The low ON-resistance MOS process and PWM control enables
driving DC motors with high thermal efficiency.
Four operating modes are selectable via IN1 and IN2: clockwise
(CW), counterclockwise (CCW), Short Brake and Stop.
Features
Power supply voltage: 50 V (max)
Output current: 4.5 A (max)
Output ON-resistance: 0.55
(typ.)
PWM control
CW/CCW/Short Brake/Stop modes
Overcurrent shutdown circuit (ISD)
Overvoltage shutdown circuit (VSD)
Thermal shutdown circuit (TSD)
Undervoltage lockout circuit (UVLO)
Dead time for preventing shoot-through current
Weight: 2.2 g (typ.)
Note: The following conditions apply to solderability:
About solderability, following conditions were confirmed
(1) Use of Sn-37Pb solder Bath
solder bath temperature: 230°C
dipping time: 5 seconds
the number of times: once
use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
solder bath temperature: 245°C
dipping time: 5 seconds
the number of times: once
use of R-type flux
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TB6643KQ
Block Diagram
(application circuit example)
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is
required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of application
circuits.
VM
5-V regulator
UVLO
VSD
TSD
ISD detection
ISD detection
OUT1
IN1
Control
Predriver
Motor
OUT2
ISD detection
ISD
ISD detection
IN2
GND
Pin Functions
Pin No.
1
2
3
4
5
6
7
Pin Name
IN1
IN2
OUT1
GND
OUT2
N.C.
VM
Functional Description
Control signal input pin 1
Control signal input pin 2
Output pin 1
Ground pin
Output pin 2
No-connect
Power supply voltage pin
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TB6643KQ
Absolute Maximum Ratings
(Note) (Ta = 25°C)
Characteristics
Power supply voltage
Output voltage
Output current 1
Output current 2
Input voltage
Power dissipation
Operating temperature
Storage temperature
Symbol
VM
V
O
I
O
peak1
I
O
peak2
V
IN
P
D
T
opr
T
stg
Rating
50
50
4.5 (Note 1)
4.0 (Note 2)
- 0.3 to 5.5
1.25 (Note 3)
- 40 to 85
- 55 to 150
Unit
V
V
A
A
V
W
°C
°C
Note: The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even
for a moment. Do not exceed any of these ratings.
Exceeding the rating (s) may cause the device breakdown, damage or deterioration, and may result injury by
explosion or combustion.
Please use the TB6643KQ within the specified operating ranges.
Note 1: The absolute maximum output current rating of 4.5 A must be kept for OUT1 and OUT2 when VM
36 V.
Note 2: The absolute maximum output current rating of 4.0 A must be kept for OUT1 and OUT2 when VM
36
V.
Note 3: No heatsink
Operating Ranges
Characteristics
Power supply voltage
PWM Frequency
Output Current
Symbol
VM
opr
f
PWM
I
O
(Ave.)
Rating
10 to 45
Up to 100
Up to 1.5 (Note 1) (given as a guide)
Unit
V
kHz
A
Note 1: Ta = 25°C, the TB6643KQ is mounted on the PCB (70 × 50 × 1.6 (mm), double-sided, Cu thickness: 50
m,
Cu dimension: 67%) with no heatsink.
*:
The average output current shall be increased or decreased depending on usage conditions such as ambient
temperature, a presence/absence of a heatsink and IC mounting method.
Please use the average output current so that the junction temperature of 150°C (T
j
) and the absolute maximum
output current rating of 4.0 A, 4.5A are not exceeded.
**: Connecting the metal plate on the rear surface of the TB6643KQ to a heatsink allows for improvement of the
power dissipation capability of the TB6643KQ. Please consider heat dissipation efficiency when designing the
board layout.
Moreover, this metal plate is electrically connected to the rear surface of the TB6643KQ; therefore, it must always
be insulated or shorted to ground.
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TB6643KQ
Electrical Characteristics
(unless otherwise specified, Ta = 25°C, VM = 24 V)
Characteristics
Symbol
I
CC1
Power supply current
I
CC2
I
CC3
Input voltage
Control circuit
IN1 pin,
IN2 pin
Input current
PWM frequency
PWM minimum pulse width
Output ON-resistance
Output leakage current
Hysteresis voltage
V
INH
V
INL
V
IN (HYS)
I
INH
I
INL
f
PWM
f
PWM (TW)
R
ON (U + L)
I
L (U)
I
L (L)
V
F (U)
V
F (L)
V
IN
= 5 V
V
IN
= 0 V
Duty: 50 %
(value given as a guide)
I
O
= 3 A
VM = 50 V, V
OUT
= 0 V
VM = V
OUT
= 50 V
I
O
= 3 A
I
O
= -3 A
Stop mode
CW/CCW mode
Short Brake mode
Test Condition
Min
2
0
1
-2
Typ.
2.5
2.5
2.5
0.4
27
100
0.55
1.3
1.3
Max
8
8
8
5.5
0.8
45
5
0.9
2
1.7
1.7
A
kHz
s
A
V
mA
Unit
Diode forward voltage
V
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TB6643KQ
Thermal Performance Characteristics
P
D
– Ta
14
12
10
8
6
4
2
0
0
(2)
(1)
(1) With a heatsink (10°C/W):
Ta = 25°C, PD = 7.8 W
(2) No heatsink:
Ta = 25°C, PD = 1.25 W
*:
With an infinite heatsink:
Rth (j-c) = 6°C/W
Thermal Resistance
Power Dissipation
P
D
(W)
Pulse width
t
(s)
25
50
75
100
125
150
Ambient temperature
Ta
(°C)
I/O Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
Pin No.
I/O Signal
I/O Internal Circuit
10 k
(typ.)
185k
(typ.)
VM
5-V regulator
OUT1 (3)
OUT2 (5)
GND (4)
VM (7)
Operating supply voltage range
VM = 10 to 45 V
OUT1 (OUT2)
GND
IN1 (1)
IN2 (2)
Digital input
L: 0.8 V (max)
H: 2 V (min)
IN1 (IN2)
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