Freescale Semiconductor
Technical Data
Document Number: MW7IC930N
Rev. 1, 10/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC930N wideband integrated circuit is designed with on--chip
matching that makes it usable from 728 to 960 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
106 mA, I
DQ2
= 285 mA, P
out
= 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
(1)
920 MHz
940 MHz
960 MHz
G
ps
(dB)
36.6
36.8
36.6
PAE
(%)
16.1
16.7
17.3
ACPR
(dBc)
--48.0
--48.7
--48.6
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
728-
-768 MHz, 920-
-960 MHz,
3.2 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 30 Watts
CW P
out
.
•
Typical P
out
@ 1 dB Compression Point
≃
31 Watts CW, I
DQ1
= 40 mA,
I
DQ2
= 340 mA
Driver Application — 700 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
106 mA, I
DQ2
= 285 mA, P
out
= 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
36.4
36.4
36.4
PAE
(%)
16.1
16.1
16.0
ACPR
(dBc)
--47.7
--47.8
--47.9
CASE 1886-
-01
TO-
-270 WB-
-16
PLASTIC
MW7IC930NR1
CASE 1887-
-01
TO-
-270 WB-
-16 GULL
PLASTIC
MW7IC930GNR1
CASE 1329-
-09
TO-
-272 WB-
-16
PLASTIC
MW7IC930NBR1
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function
(2)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
GND
1
16
GND
2
NC
•
RoHS Compliant
15
NC
3
NC
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
4
GND
DS1
5
6
V
DS1
RF
in
RF
out
/V
DS2
RF
in
GND
V
GS1
V
GS2
NC
GND
14
RF
out
/V
DS2
V
GS1
V
GS2
7
8
9
10
11
13
12
NC
GND
Quiescent Current
Temperature Compensation
(2)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80°C, 3.2 W CW)
Stage 1, 28 Vdc, I
DQ1
= 106 mA
Stage 2, 28 Vdc, I
DQ2
= 285 mA
Stage 1, 28 Vdc, I
DQ1
= 40 mA
Stage 2, 28 Vdc, I
DQ2
= 340 mA
Symbol
R
θJC
Value
(2,3)
5.5
1.6
5.8
1.2
Unit
°C/W
(Case Temperature 80°C, 30 W CW)
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 14
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 106 mA)
Fixture Gate Quiescent Voltage
(4)
(V
DD
= 28 Vdc, I
DQ1
= 106 mA, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
6.9
2
2.8
9.4
2.7
—
11.9
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. V
GG
= 3.3 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 74
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 285 mA)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
DQ2
= 285 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 740 mA)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.2
0.1
2
2.6
5.9
0.3
2.7
—
7.6
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 106 mA, I
DQ2
= 285 mA, P
out
= 3.2 W Avg.,
f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
33
14
—
—
35.9
16.5
--49.5
--18.7
38
—
--46
--9
dB
%
dBc
dB
Typical Broadband Performance — 900 MHz
(In Freescale 900 MHz Application Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
=
106 mA, I
DQ2
= 285 mA, P
out
= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
36.6
36.8
36.6
PAE (%)
16.1
16.7
17.3
ACPR (dBc)
--48.0
--48.7
--48.6
IRL (dB)
--19.9
--20.8
--19.7
1. V
GG
= 2.25 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 900 MHz
(In Freescale 900 MHz Application Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 106 mA, I
DQ2
=
285 mA, 920--960 MHz Bandwidth
V
DD
= 28 Vdc, I
DQ1
= 40 mA, I
DQ2
= 340 mA
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 25 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(1)
with 3 kΩ Gate Feed Resistors (--30 to 85°C)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 3.2 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB
IMD
sym
—
31
—
W
MHz
—
45
—
VBW
res
∆I
QT
G
F
∆G
∆P1dB
—
—
—
—
—
80
0.02
0.2
0.036
0.01
—
—
—
—
—
MHz
%
dB
dB/°C
dBm/°C
Typical W-
-CDMA Broadband Performance — 700 MHz
(In Freescale 700 MHz Application Test Fixture, 50 ohm system) V
DD
= 28 Vdc,
I
DQ1
= 106 mA, I
DQ2
= 285 mA, P
out
= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
36.4
36.4
36.4
PAE (%)
16.1
16.1
16.0
ACPR (dBc)
--47.7
--47.8
--47.9
IRL (dB)
--17.9
--20.7
--21.8
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
4
RF Device Data
Freescale Semiconductor
V
DD1
C14 C15
R7
V
DD2
C13
C17
C9
C16
C8 C7
CUT OUT AREA
C18
C6
C5 C4
C11
C10
C12
R4
V
GG1
V
GG2
R1
R5
R6
C3
C2
C1
MW7IC930N
Rev 2
R2
R3
Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz
Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz
Part
C1, C4, C7
C2, C5, C8
C3, C6
C9, C15
C10
C11
C12
C13, C14
C16, C17
C18
R1, R2, R3, R4, R5, R6
R7
PCB
Description
47 pF Chip Capacitors
10 nF, 50 V Chip Capacitors
1
μF,
50 V Chip Capacitors
10
μF,
50 V Chip Capacitors
16 pF Chip Capacitor
6.2 pF Chip Capacitor
7.5 pF Chip Capacitor
47 pF Chip Capacitors
100
μF,
50 V Electrolytic Capacitors
0.5 pF Chip Capacitor
1000
Ω,
1/4 W Chip Resistors
0
Ω,
3A Chip Resistor
0.020″,
ε
r
= 3.5
Part Number
ATC600F470JT250XT
C0603C103J5RAC--TU
GRM21BR71H105KA12L
GRM55DR61H106KA88L
ATC100B160JT500XT
ATC100B6R2BT500XT
ATC100B7R5CT500XT
ATC100B470JT500XT
MCGPR35V337M10X16--RH
ATC100B0R5BT500XT
CRCW12061K00FKEA
CRCW12060000Z0EA
RF--35
Manufacturer
ATC
Kemet
Murata
Murata
ATC
ATC
ATC
ATC
Multicomp
ATC
Vishay
Vishay
Taconic
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
5
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