Freescale Semiconductor
Technical Data
Document Number: MW7IC2725N
Rev. 3, 1/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chip
matching that makes it usable from 2300- 2700 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 77 mA, I
DQ2
= 275 mA,
P
out
= 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Driver Applications
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 77 mA, I
DQ2
= 275 mA,
P
out
= 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW
P
out
•
Typical P
out
@ 1 dB Compression Point
]
25 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•
On-Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500-2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-01
TO-270 WB-16
PLASTIC
MW7IC2725NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2725NBR1
GND
V
DS1
NC
NC
NC
RF
in
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
V
DS1
RF
in
RF
out
/V
DS2
14
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
GS1
V
GS2
V
DS1
GND
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current
Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
-0.5, +65
-0.5, +10
32, +0
-65 to +150
150
225
22
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
WiMAX Application
(Case Temperature 75°C, P
out
= 4 W Avg.)
CW Application
(Case Temperature 81°C, P
out
= 25 W CW)
Stage 1, 28 Vdc, I
DQ1
= 77 mA
Stage 2, 28 Vdc, I
DQ2
= 275 mA
Stage 1, 28 Vdc, I
DQ1
= 77 mA
Stage 2, 28 Vdc, I
DQ2
= 275 mA
Symbol
R
θJC
5.9
1.4
5.5
1.3
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
1B (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22-A113, IPC/JEDEC J-STD-020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 - On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 77 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 77 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
12.5
1.9
2.7
15.8
2.7
—
19.5
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 80
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 275 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 275 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 800 mAdc)
Stage 2 - Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
111
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
11
0.15
1.9
2.7
14
0.47
2.7
—
18
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 77 mA, I
DQ2
= 275 mA, P
out
= 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
PAR
ACPR
IRL
25.5
15
—
—
—
28.5
17
9
-50
-15
30.5
—
—
-46
-10
dB
%
dB
dBc
dB
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc,
I
DQ1
= 77 mA, I
DQ2
= 275 mA, P
out
= 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error
(2)
Error Vector Magnitude
(2)
1. Part internally matched both on input and output.
2. RCE = 20Log(EVM/100)
RCE
EVM
—
—
-33
2.2
—
—
dB
% rms
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 77 mA, I
DQ2
= 275 mA, 2500- 2700 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 27 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 4 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 25 W CW
Average Group Delay @ P
out
= 25 W CW, f = 2600 MHz
Part-to-Part Insertion Phase Variation @ P
out
= 25 W CW,
f = 2600 MHz, Six Sigma Window
Gain Variation over Temperature
(-30
°C
to +85°C)
Output Power Variation over Temperature
(-30
°C
to +85°C)
P1dB
IMD
sym
—
50
—
—
25
—
W
MHz
VBW
res
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
—
90
0.5
2.1
2.3
22
0.036
0.003
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dBm/°C
Typical Driver Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 77 mA, I
DQ2
= 275 mA, P
out
= 26 dBm Avg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Relative Constellation Error @ P
out
= 1.25 W Avg.
(1)
1. RCE = 20Log(EVM/100)
G
ps
PAE
PAR
ACPR
IRL
RCE
—
—
—
—
—
—
27.8
3.2
9
-56
-13
-40
—
—
—
—
—
—
dB
%
dB
dBc
dB
dB
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
4
RF Device Data
Freescale Semiconductor
V
DD1
C17
C9
C8
V
D2
C16
C15
B1
28 V
C14
C7
1
2
3
4
5
Z1
Z2
Z3
C4
C5
C6
V
G1
R4
V
G2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″ x 0.027″ Microstrip
0.075″ x 0.127″ Microstrip
1.640″ x 0.027″ Microstrip
0.100″ x 0.042″ Microstrip
0.151″ x 0.268″ Microstrip
0.025″ x 0.268″ x 0.056″ Taper
0.050″ x 0.056″ Microstrip
0.356″ x 0.056″ Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
0.338″ x 0.020″ Microstrip
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″,
ε
r
= 3.48
R5
R6
C2
C3
C1
Z4
6
C11
7 NC
8
9
10
11 NC
C10
Quiescent Current
Temperature
Compensation
NC
NC
NC
NC
14
Z5
Z6
Z7
Z8
Z9
Z10
Z11
DUT
NC 16
NC 15
Z13
Z12 Z14
C13
C12
RF
INPUT
RF
OUTPUT
NC 13
NC 12
* Line length includes microstrip bends
Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
B1
C1, C4, C7, C12, C15
C2, C5, C8, C13
C3, C6, C9, C14
C10
C11
C16, C17
R1, R4
R2, R3, R5, R6
Description
47
Ω,
100 MHz Short Ferrite Bead
6.8 pF Chip Capacitors
10 nF Chip Capacitors
1
μF,
50 V Chip Capacitors
2.4 pF Chip Capacitor
3.3 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
12 KΩ, 1/4 W Chip Resistors
1 KΩ, 1/4 W Chip Resistors
Part Number
2743019447
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GRM55DR61H106KA88B
CRCW12061202FKEA
CRCW12061001FKEA
Manufacturer
Fair-Rite
ATC
Kemet
Murata
ATC
ATC
Murata
Vishay
Vishay
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
5
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