Freescale Semiconductor
Technical Data
Document Number: MW7IC2220N
Rev. 2, 5/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD--SCDMA.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
= 80 mA,
I
DQ2
= 300 mA, P
out
= 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset —
-
-50
dBc in 3.84 MHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 Watts
CW P
out
.
•
Typical P
out
@ 1 dB Compression Point
'
20 Watts CW
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
2110-
-2170 MHz, 2 W Avg., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-
-01
TO-
-270 WB-
-16
PLASTIC
MW7IC2220NR1
CASE 1887-
-01
TO-
-270 WB-
-16 GULL
PLASTIC
MW7IC2220GNR1
CASE 1329-
-09
TO-
-272 WB-
-16
PLASTIC
MW7IC2220NBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2008--2009, 2011. All rights reserved.
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--0.5, +5
32, +0
--65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
2 W Avg.
(P
out
= 2 W CW, Case Temperature = 78°C)
20 W Avg.
(P
out
= 20 W CW, Case Temperature = 82°C)
Symbol
R
θJC
Stage 1, 28 Vdc, I
DQ1
= 80 mA
Stage 2, 28 Vdc, I
DQ2
= 300 mA
Stage 1, 28 Vdc, I
DQ1
= 80 mA
Stage 2, 28 Vdc, I
DQ2
= 300 mA
4.3
1.5
Value
(2,3)
Unit
°C/W
4.3
1.25
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 23
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 80 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 80 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
9.5
2
2.8
12.2
2.7
—
16.5
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 300 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 — Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
205
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
7
0.2
2
2.7
8
0.39
2.7
—
12.5
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 80 mA, I
DQ2
= 300 mA,
P
out
= 2 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 18 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 2 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 20 W CW
Average Group Delay @ P
out
= 20 W CW, f = 2140 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 20 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
1. Part internally matched both on input and output.
G
ps
PAE
ACPR
IRL
P1dB
IMD
sym
29
11
—
—
—
—
31
13
--50
--14
20
40
34
—
--47
--12
—
—
dB
%
dBc
dB
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 80 mA, I
DQ2
= 300 mA, 2110--2170 MHz
VBW
res
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
—
70
0.6
1.2
2.5
15
0.036
0.003
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dB/°C
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
3
+
C26
V
DD2
V
DD1
C9
RF
INPUT
C10
1
2
3
4
5
6
7 NC
8
9
10
11 NC
Quiescent Current
Temperature
Compensation
NC
NC
NC
NC
DUT
16
15
Z13
C11
Z7
C12
Z14
13
12
C21
C22
C23
C24
C25
C13
Z9
RF
OUTPUT
C16
C17
C18
C19
C20
Z1
C1
C2
Z2
Z3
Z4
14
Z5
Z6
Z8
Z10
Z11
C14
C15
Z12
V
GG1
R1
C3
V
GG2
R2
C5
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C6
C7
C8
Z8
Z9
Z10
Z11
Z12
Z13, Z14
PCB
0.263″ x 0.123″ Microstrip
0.125″ x 0.123″ Microstrip
0.280″ x 0.083″ Microstrip
0.373″ x 0.083″ Microstrip
0.364″ x 0.083″ Microstrip
1.042″ x 0.083″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
0.090″ x 0.083″ Microstrip
2.107″ x 0.083″ Microstrip
0.016″ x 0.083″ x 0.055″ Taper
0.106″ x 0.055″ Microstrip
0.570″ x 0.322″ Microstrip
0.204″ x 0.322″ Microstrip
0.050″ x 0.322″ Microstrip
Figure 3. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1
C2, C3
C4
C5, C6
C7, C9
C8, C10
C11, C12
C13
C14
C15, C16, C21
C17, C22
C18, C23
C19, C24
C20, C25
C26
R1, R2
Description
0.1 pF Chip Capacitor
8.2 pF Chip Capacitors
4.7
μF,
50 V Chip Capacitor
0.4 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
5.6 pF Chip Capacitors
0.3 pF Chip Capacitors
0.8 pF Chip Capacitor
1.1 pF Chip Capacitor
9.1 pF Chip Capacitors
0.1
μF,
250 V Chip Capacitors
6.8
μF,
50 V Chip Capacitors
4.7
μF,
50 V Chip Capacitors
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
10 kΩ, 1/4 W Chip Resistors
Part Number
ATC100B0R1JT500XT
ATC100B8R2BT500XT
C4532X7R1H475KT
ATC100B0R4JT500XT
C3225Y5V1H106ZT
ATC100B5R6JT500XT
ATC100B0R3JT500XT
ATC100B0R8JT500XT
ATC100B1R1JT500XT
ATC100B9R1JT500XT
C3216X7R2E104KT
C4532X7R1H685KT
C4532X7R1H475KT
C3225Y5V1H106ZT
477KXM063M
CRCW12061002FKEA
Manufacturer
ATC
ATC
TDK
ATC
TDK
ATC
ATC
ATC
ATC
ATC
TDK
TDK
TDK
TDK
Illinois Capacitor
Vishay
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
4
RF Device Data
Freescale Semiconductor
C26
C16
C9
C17
C18 C19 C20
CUT OUT AREA
C10
C11
C12
C1
C5
MW7IC2220N
Rev. 0
C6
V
GG1
C2 R1
C3 R2
C4
C7
C8
C13
C14
C23 C24
C25
C21
C22
C15
Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
5
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