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GS88136GT-80T

产品描述Cache SRAM, 256KX36, 14ns, CMOS, PQFP100, TQFP-100
产品类别存储    存储   
文件大小463KB,共33页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
下载文档 详细参数 全文预览

GS88136GT-80T概述

Cache SRAM, 256KX36, 14ns, CMOS, PQFP100, TQFP-100

GS88136GT-80T规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间14 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码R-PQFP-G100
JESD-609代码e3
长度20 mm
内存密度9437184 bit
内存集成电路类型CACHE SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层PURE MATTE TIN
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

文档预览

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Preliminary
GS88118/36T-11/11.5/100/80/66
100-Pin TQFP
Commercial Temp
Industrial Temp
1.11 9/2000Features
• FT pin for user-configurable flow through or pipelined
operation
• Single Cycle Deselect (SCD) Operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 100-lead TQFP package
-11
-11.5
-100
-80
-66
10 ns
10 ns 12.5 ns 15 ns
Pipeline tCycle 10 ns
4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns
3-1-1-1
t
KQ
I
DD
225 mA 225 mA 225 mA 200 mA 185 mA
11 ns 11.5 ns 12 ns
14 ns
18 ns
Flow
t
KQ
Through tCycle 15 ns
15 ns
15 ns
15 ns
20 ns
2-1-1-1
I
DD
180 mA 180 mA 180 mA 175 mA 165 mA
512K x 18, 256K x 36 ByteSafe™
100 MHz–66 MHz
3.3 V V
DD
8Mb Sync Burst SRAMs
3.3 V and 2.5 V I/O
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS88118//36T is a SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
ByteSafe™ Parity Functions
The GS88118/36T features ByteSafe data security functions.
See detailed discussion following.
Functional Description
Applications
The GS88118//36T is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(high) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88118//36T operates on a 3.3 V power supply, and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuit.
Controls
Addresses, data I/Os, chip enables (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
Rev: 1.11 9/2000
1/33
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 
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