Freescale Semiconductor
Technical Data
Document Number: MW7IC2240N
Rev. 1, 6/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD--SCDMA.
Typical Performance
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ1
= 90 mA, I
DQ2
= 420 mA, P
out
= 4 Watts Avg., f = 2112.5 MHz,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain — 30 dB
Power Added Efficiency — 14%
ACPR @ 5 MHz Offset —
-
-50
dBc in 3.84 MHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
≃
40 Watts CW
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts
CW P
out
.
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MW7IC2240NR1
MW7IC2240GNR1
MW7IC2240NBR1
2110-
-2170 MHz, 4 W Avg., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-
-01
TO-
-270 WB-
-16
PLASTIC
MW7IC2240NR1
CASE 1887-
-01
TO-
-270 WB-
-16 GULL
PLASTIC
MW7IC2240GNR1
CASE 1329-
-09
TO-
-272 WB-
-16
PLASTIC
MW7IC2240NBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
V
GS1
V
GS2
V
DS1
GND
NC
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2007, 2011. All rights reserved.
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--0.5, +5
32, +0
--65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
4 W CW
(P
out
= 3.95 W CW, Case Temperature = 68°C)
Symbol
R
θJC
Value
(2,3)
Unit
°C/W
Stage 1, 28 Vdc, I
DQ1
= 90 mA
Stage 2, 28 Vdc, I
DQ2
= 420 mA
3.9
1.3
40 W CW
(P
out
= 39.4 W CW, Case Temperature = 80°C)
Stage 1, 28 Vdc, I
DQ1
= 90 mA
Stage 2, 28 Vdc, I
DQ2
= 420 mA
3.2
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
0 (Minimum)
A (Minimum)
II (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
2
RF Device Data
Freescale Semiconductor
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 23
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 90 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 90 mAdc, Measured in Functional Test)
Stage 1 — Dynamic Characteristics
(1)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 420 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 420 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 — Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
1. Part internally matched both on input and output.
(continued)
C
rss
C
oss
—
—
0.67
205
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
7
0.2
2
2.8
9.8
0.39
2.7
—
12.5
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
C
iss
—
50
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
9.5
2
2.9
13
2.7
—
16.5
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 90 mA, I
DQ2
= 420 mA,
P
out
= 4 W Avg., f = 2112.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
28
12
—
—
30
14
--50
--16
33
—
--46
--12
dB
%
dBc
dB
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 90 mA, I
DQ2
= 420 mA, 2110--2170 MHz
P
out
@ 1 dB Compression Point, CW
Video Bandwidth @ 40 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 4 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 40 W CW
Average Group Delay @ P
out
= 40 W CW, f = 2140 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 40 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB
VBW
—
10
—
—
40
—
W
MHz
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
0.1
1.08
1.98
18.3
0.05
0.004
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dB/°C
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
4
RF Device Data
Freescale Semiconductor
+
C23
V
DD2
V
DD1
C4
RF
INPUT
C6
1
2
3
4
5
6
7 NC
8
9
10
11 NC
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C3
C5
C7
Z8
Z9
Z10
Z11
Z12, Z13
PCB
Quiescent Current
Temperature
Compensation
NC
NC
NC
NC
DUT
16
15
Z12
C8
14
Z4
Z5
C9
Z13
13
12
C11
C13
C15
C21
C22
Z6
Z7
Z8
C16
Z9
Z10
C17
C18
Z11
RF
OUTPUT
C10
C12
C14
C19
C20
Z1
C1
Z2
Z3
V
GG1
V
GG2
R1
R2
2.197″ x 0.083″ Microstrip
0.016″ x 0.083″ x 0.055″ Taper
0.106″ x 0.055″ Microstrip
0.409″ x 0.322″ Microstrip
0.161″ x 0.322″ Microstrip
0.254″ x 0.322″ Microstrip
0.388″ x 0.123″ Microstrip
0.204″ x 0.083″ Microstrip
0.273″ x 0.083″ Microstrip
0.176″ x 0.083″ Microstrip
0.364″ x 0.083″ Microstrip
0.564″ x 0.083″ Microstrip
Arlon Cuclad 250GX--0300--55--22, 0.030″,
ε
r
= 2.5
Figure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1
C2, C16
C3, C14, C15
C4, C5, C19, C20, C21, C22
C6, C7, C10, C11
C8, C9
C12, C13
C17
C18
C23
R1, R2
Description
8.2 pF Chip Capacitor
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4.7
μF,
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μF,
50 V Chip Capacitors
5.6 pF Chip Capacitors
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0.1
μF
Chip Capacitors
0.6 pF Chip Capacitor
6.8 pF Chip Capacitor
470
μF,
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Part Number
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Manufacturer
ATC
ATC
Murata
Murata
ATC
ATC
Kemet
ATC
ATC
Illinois
Vishay
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
5
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