Freescale Semiconductor
Technical Data
Document Number: MW7IC2020N
Rev. 1, 12/2013
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC2020N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 2170 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Driver Application — 2100 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
40 mA, I
DQ2
= 230 mA, P
out
= 2.4 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
32.6
32.6
32.4
PAE
(%)
16.8
17.0
17.0
Output PAR
(dB)
7.7
7.6
7.5
ACPR
(dBc)
--51.3
--51.4
--51.6
MW7IC2020NT1
1805-
-2170 MHz, 2.4 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, P
out
= 33 Watts
CW (3 dB Input Overdrive from Rated P
out
)
Typical P
out
@ 1 dB Compression Point
≃
20 Watts CW
Driver Application — 1800 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ1
= 40 mA, I
DQ2
= 230 mA, P
out
= 2.4 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
31.8
31.8
31.8
PAE
(%)
17.4
17.4
17.4
Output PAR
(dB)
7.6
7.7
7.7
ACPR
(dBc)
--51.2
--50.2
--51.0
PQFN 8
8
PLASTIC
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
V
GS1
NC
V
GS2
NC
NC
NC
18
17
16
15
14
13
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(1)
NC
GND
RF
in
RF
in
GND
NC
RF
in
RF
out
/V
DS2
1
2
3
4
5
6
24 23 22 21 20 19
7 8 9 10 11 12
NC
V
DS1
V
DS1
NC
NC
NC
NC
NC
RF
out
/V
DS2
RF
out
/V
DS2
NC
NC
V
DS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2012--2013. All rights reserved.
MW7IC2020NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
P
in
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
37
Unit
Vdc
Vdc
Vdc
C
C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84C, 2.4 W CW
Stage 1, 28 Vdc, I
DQ1
= 40 mA, 2140 MHz
Stage 2, 28 Vdc, I
DQ2
= 230 mA, 2140 MHz
Case Temperature 92C, 24 W CW
Stage 1, 28 Vdc, I
DQ1
= 40 mA, 2140 MHz
Stage 2, 28 Vdc, I
DQ2
= 230 mA, 2140 MHz
Symbol
R
JC
9.0
1.9
8.6
1.6
Value
(2,3)
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 12
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 40 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 40 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.0
—
6.2
2.0
2.9
6.9
3.0
—
7.7
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW7IC2020NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 230 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 230 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.75 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.0
—
4.7
0.1
2.0
2.8
5.5
0.3
3.0
—
6.2
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 40 mA, I
DQ2
= 230 mA, P
out
= 2.4 W Avg.,
f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
31.0
16.0
—
—
32.6
17.0
--51.4
--12
36.0
—
--47.0
--10
dB
%
dBc
dB
Typical Performance over Frequency — 2100 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 40 mA, I
DQ2
=
230 mA, P
out
= 2.4 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 9 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(2)
with 2 k Gate Feed Resistors (--30 to 85C)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 2.4 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
Stage 1
Stage 2
G
ps
(dB)
32.6
32.6
32.4
Symbol
P1dB
IMD
sym
PAE
(%)
16.8
17.0
17.0
Min
—
—
Output PAR
(dB)
7.7
7.6
7.5
Typ
20
25
ACPR
(dBc)
--51.3
--51.4
--51.6
Max
—
—
IRL
(dB)
--14
--12
--11
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 40 mA, I
DQ2
= 230 mA, 2110--2170 MHz Bandwidth
VBW
res
I
QT
G
F
G
P1dB
—
—
—
—
—
—
90
0.00
3.70
0.2
0.045
0.004
—
—
—
—
—
—
MHz
%
dB
dB/C
dB/C
1. Part internally input matched.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent
Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application
Notes -- AN1977 or AN1987.
(continued)
MW7IC2020NT1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Typical Performance over Frequency — 1800 MHz
(In Freescale 1800 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 40 mA,
I
DQ2
= 230 mA, P
out
= 2.4 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
31.8
31.8
31.8
PAE
(%)
17.4
17.4
17.4
Output PAR
(dB)
7.6
7.7
7.7
ACPR
(dBc)
--51.2
--50.2
--51.0
IRL
(dB)
--13
--9
--6
MW7IC2020NT1
4
RF Device Data
Freescale Semiconductor, Inc.
V
GG2
V
GG1
R2
C10 C11 C12
V
DD2
C3
C7
C8
R1
C1
C2
C9
MW7IC2020N
Rev. 0
V
DD1
C4
C5
V
DD2
C6
C13 C14
C15
Figure 3. MW7IC2020NT1 Test Circuit Component Layout
Table 6. MW7IC2020NT1 Test Circuit Component Designations and Values
Part
C1
C2, C3, C11, C14
C4, C9, C10, C13
C5
C6, C12, C15
C7
C8
R1, R2
PCB
Description
1.2 pF, Chip Capacitor
4.7
F,
50 V Chip Capacitors
33 pF Chip Capacitors
1.0
F,
100 V Chip Capacitor
10
F,
50 V Chip Capacitors
0.5 pF Chip Capacitor
0.6 pF Chip Capacitor
4.7 k, 1/4 W Chip Resistors
0.020,
r
= 3.5
Part Number
ATC600F1R2BT250XT
GRM31CR71H475KA12L
ATC600F330JT250XT
GRM31CR72A105KA01L
GRM55DR61H106KA88L
ATC100B0R5BT500XT
ATC600F0R6BT250XT
CRCW12064K70FKEA
RO4350
Manufacturer
ATC
Murata
ATC
Murata
Murata
ATC
ATC
Vishay
Rogers
MW7IC2020NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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