SO
T6
BF1206F
Dual N-channel dual gate MOSFET
Rev. 2 — 7 September 2011
Product data sheet
1. Product profile
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
66
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Suited for 3 volt applications
1.3 Applications
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
I
D
y
fs
drain-source voltage (DC)
drain current (DC)
forward transfer admittance
I
D
= 4 mA
amplifier A
amplifier B
C
iss(G1)
input capacitance at gate1
I
D
= 4 mA; f = 100 MHz
amplifier A
amplifier B
NF
noise figure
I
D
= 4 mA
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod
cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
92
93
97
98
-
-
dBV
dBV
-
-
1.0
1.0
1.6
1.6
dB
dB
-
-
2.4
1.7
2.9
2.2
pF
pF
17
17
22
22
32
32
mS
mS
Conditions
Min
-
-
Typ
-
-
Max Unit
6
30
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
source
gate1 (AMP B)
drain (AMP B)
drain (AMP A)
gate2
1
2
3
G1B
6
5
4
G1A
AMP A
G2
Simplified outline
Symbol
S
AMP B
DA
DB
sym111
3. Ordering information
Table 3.
Ordering information
Package
Name
BF1206F
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
BF1206F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
2 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
4. Marking
Table 4.
BF1206F
Marking
Marking code
2N
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage (DC)
drain current (DC)
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
6
30
10
10
180
150
150
Unit
V
mA
mA
mA
mW
C
C
Per MOSFET
T
sp
107
C
[1]
-
65
-
T
sp
is the temperature at the solder point of the source lead.
250
P
tot
(mW)
200
001aac193
150
100
50
0
0
50
100
150
T
sp
(˚C)
200
Fig 1.
Power derating curve
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
All information provided in this document is subject to legal disclaimers.
Conditions
Typ
240
Unit
K/W
BF1206F
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
3 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
7. Static characteristics
Table 7.
Static characteristics
T
j
= 25
C.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
amplifier A
amplifier B
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain cut-off current
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
V
G2-S
= 2.5 V; V
DS
= 2.8 V
amplifier A; R
G1
= 270 k
amplifier B; R
G1
= 220 k
I
G1-S
gate1 cut-off current
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0 V
amplifier A
amplifier B
I
G2-S
[1]
[1]
Min
Typ
Max Unit
Per MOSFET; unless otherwise specified
6
6
6
6
0.5
0.5
0.3
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
6.5
6.5
50
50
20
V
V
V
V
V
V
V
V
mA
mA
nA
nA
nA
0.35 -
3
3
-
-
-
-
-
-
-
-
gate2 cut-off current
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0 V;
R
G1
connects gate 1 to V
GG
= 2.8 V.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8.
Dynamic characteristics for amplifier A
Common source; T
amb
= 25
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
y
fs
C
iss(G1)
C
iss(G2)
C
oss
C
rss
G
tr
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
transducer power gain
Conditions
T
j
= 25
C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
BF1206F
All information provided in this document is subject to legal disclaimers.
Min
17
[1]
[1]
[1]
[1]
[1]
Typ
22
2.4
3.2
1.1
15
31
28
23
3.5
1.0
1.1
Max
32
2.9
-
-
30
-
-
-
-
1.6
1.7
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
4 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
Table 8.
Dynamic characteristics for amplifier A
…continued
Common source; T
amb
= 25
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
Xmod
Parameter
cross modulation
Conditions
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
[1]
[2]
Calculated from measured S-parameters.
Measured in
Figure 32
test circuit.
[2]
Min
Typ
Max
Unit
88
-
92
-
85
97
-
-
-
dBV
dBV
dBV
8.1.1 Graphs for amplifier A
001aad896
(1)
(2)
(3)
001aad897
(1)
(2)
15
I
D
(mA)
10
16
I
D
(mA)
12
(3)
8
(4)
5
(4)
(5)
4
(6)
(7)
0
0
0.4
0.8
1.2
1.6
2.0
V
G1−S
(V)
0
0
1
2
3
V
DS
(V)
4
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(A)
= 2.8 V; T
j
= 25
C.
(1) V
G1-S(A)
= 1.4 V.
(2) V
G1-S(A)
= 1.3 V.
(3) V
G1-S(A)
= 1.2 V.
(4) V
G1-S(A)
= 1.0 V.
(5) V
G1-S(A)
= 0.9 V.
(6) V
G1-S(A)
= 0.85 V.
(7) V
G1-S(A)
= 0.8 V.
V
G2-S
= 2.5 V; T
j
= 25
C.
Fig 2.
Amplifier A: transfer characteristics; typical
values
Fig 3.
Amplifier A: output characteristics; typical
values
BF1206F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
5 of 21
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