BCM856S
PNP Silicon AF Transistor Array
•
Precision matched transistor pair:
∆I
C
≤
10%
•
For current mirror applications
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated Transistors
•
Complementary type: BCM846S
•
BC856S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07175
Type
BCM856S
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
3Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Value
65
80
80
5
100
200
250
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Total power dissipation-
T
S
= 115 °C
Junction temperature
Storage temperature
mA
mW
°C
1
2011-10-05
BCM856S
Thermal Resistance
Parameter
Symbol
R
thJS
Symbol
min.
DC Characteristics
Value
Unit
Junction - soldering point
1)
140
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 A
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
65
80
80
5
-
-
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 A
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0 A
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0 A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0 A
V
CB
= 30 V,
I
E
= 0 A,
T
A
= 150 °C
µA
-
-
-
-
250
290
90
250
700
850
650
-
-
-
0.015
5
-
-
200
-
450
mV
-
-
300
650
-
-
750
820
%
-10
-10
10
10
DC current gain-
2)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
h
FE
Collector-emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
Base emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat
-
-
V
BE(ON)
Base-emitter voltage-
2)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
600
-
∆I
C
Matching
I
B
= 1 µA,
V
CE1
=
V
CE2
= 1.0V
I
B
= 100 µA,
V
CE1
=
V
CE2
= 1.0V
2
Puls
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
test: t < 300µs; D < 2%
2
2011-10-05
BCM856S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ
F
-
-
10
dB
h
22e
-
30
-
µS
h
21e
-
330
-
-
h
12e
-
2
-
10
-4
h
11e
-
4.5
-
kΩ
C
eb
-
8
-
C
cb
-
3
-
pF
f
T
-
250
-
MHz
Symbol
min.
Values
typ.
max.
Unit
3
2011-10-05
BCM856S
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 5V
10
3
EHP00382
Collector-emitter saturation voltage
I
C
=
ƒ(V
CEsat
),
h
FE
= 20
10
2
EHP00380
h
FE
5
100 C
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
5
10
1
5
10
5
0
10
0
10
-2
5 10
-1
5 10
0
5 10
1
mA 10
2
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
V
CEsat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(V
BEsat
),
h
FE
= 20
10
2
mA
EHP00379
Output characteristics
I
C
=
ƒ(V
CE
),
I
B
= parameter
15
mA
Ι
C
100 C
25 C
-50C
IC
12
11
10
9
8
7
6
IB = 40µA
IB = 36µA
IB =32µA
IB = 28µA
IB = 24µA
IB = 20µA
IB = 16µA
IB = 12µA
IB = 8µA
IB = 4µA
10
5
1
10
0
5
5
4
3
2
1
10
-1
0
0.2
0.4
0.6
0.8
V
1.2
V
BEsat
0
0
1
2
3
V
VCE
5
4
2011-10-05
BCM856S
Collector current
I
C
=
ƒ(V
BE
)
V
CE
= Parameter
10
-1
A
5V
1V
5V
1V
5V
1V
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CBO
= 30 V
10
4
nA
EHP00381
Ι
CB0
10
3
5
10
-2
TA=100°C
IC
10
-3
TA=25°C
10
2
5
max
10
-4
TA=-50°C
10
1
5
10
5
0
typ
10
-5
10
-6
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
VBE
1
10
-1
0
50
100
C
T
A
150
Transition frequency
f
T
=
ƒ(I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
EHP00378
Collector-base capacitance
C
cb
=
ƒ(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(V
EB
)
12
pF
f
T
5
C
CB
(C
EB
)
10
9
8
7
6
5
CEB
10
2
5
4
3
2
1
CCB
10
1
10
-1
5 10
0
5
10
1
mA
Ι
C
10
2
0
0
4
8
12
16
V
22
V
CB
(V
EB
)
5
2011-10-05
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
