Datasheet> 器件分类 > 分立半导体> 晶体管> BC860-B

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BC860-B: 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; 产品类别分立半导体晶体管; 文件大小40KB，共2页; 制造商KEC; 官网地址http://www.keccorp.com/

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BC860-B概述

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BC860-B规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	45 V
配置	SINGLE
最小直流电流增益 (hFE)	220
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	150 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

・For

Complementary with NPN Type BC849/850

・Suffix

: Qualified to AEC-Q101.

ex) BC860-B-RTK/PU

BC859/860

EPITAXIAL PLANAR PNP TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base

Voltage

Collector-Emitter

Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

BC859

BC860

BC859

BC860

SYMBOL

CBO

CEO

EBO

stg

RATING

-30

-50

-30

-45

-5

-100

350

150

-55½150

UNIT

DIM

MILLIMETERS

2.93 + 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

0.1 MAX

℃

1. EMITTER

2. BASE

3. COLLECTOR

* : Package Mounted On 99.5% Alumina 10×8×0.6mm.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector-Emitter

Breakdown Voltage

Collector-Base

Breakdown Voltage

BC859

BC860

BC859

BC860

SYMBOL

(BR)CEO

(BR)CBO

(BR)EBO

CBO

BE(ON)

CE(sat)

BE(sat)

A:125½250,

B:220½475

TEST CONDITION

=-10mA, I

MIN.

-30

-45

-30

-50

-5

125

-0.6

TYP.

-0.65

-0.075

-0.25

-0.7

-0.85

150

4.5

4.0

MAX.

-15

475

-0.75

-0.82

-0.3

-0.65

UNIT

=-10μ I

=-30V, I

=-2mA, V

=-5V

=-2mA, V

=-5V

=-10mA, V

=-5V

=-10mA, I

=-0.5mA

=-100mA, I

=-5mA

=-10mA, I

=-0.5mA

=-100mA, I

=-5mA

=-10mA, V

=-5V, f=100MHz

=-10V, I

=0, f=1MHz

=-200μ V

=-5V

Rg=10kΩ, f=1kHz

SOT-23

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Base-Emitter Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure

Note : h

Classification

MHz

Marking

Lot No.

MARK SPEC

TYPE

MARK

BC859A

BC859B

BC860A

BC860B

Type Name

2018. 04. 10

Revision No : 3

1/2

BC860-B相似产品对比

	BC860-B	BC859-B-RTK/PU	BC859-RTK/PU	BC859-A-RTK/PU	BC859-A	BC860-A-RTK/PU	BC860-B-RTK/PU	BC859-B
描述	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
厂商名称	-	-	KEC	KEC	KEC	KEC	KEC	KEC

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