BCW60, BCX70
NPN Silicon AF Transistors
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types: BCW61, BCX71 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
BCW60B
BCW60C
BCW60D
BCW60FF
BCX70G
BCX70H
BCX70J
BCX70K
1
Pb-containing
Marking
ABs
ACs
ADs
AFs
AGs
AHs
AJs
AKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
package may be available upon special request
1
2007-04-20
BCW60, BCX70
Maximum Ratings
Parameter
Collector-emitter voltage
BCW60, ...60FF
BCX70
Collector-base voltage
BCW60, ...60FF
BCX70
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
T
S
≤
71 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Symbol
V
CEO
Value
32
45
Unit
V
V
CBO
32
45
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
6
100
200
200
330
150
-65 ... 150
Value
≤
240
Unit
K/W
mW
°C
mA
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-04-20
BCW60, BCX70
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BCW60, ...60FF
I
C
= 10 mA,
I
B
= 0 , BCX70
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BCW60, ...60FF
I
C
= 10 µA,
I
E
= 0 , BCX70
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 32 V,
I
E
= 0 , BCW60, ...60FF
V
CB
= 45 V,
I
E
= 0 , BCX70
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 °C, BCW60, ...60FF
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C, BCX70
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain-
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. G
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. B/ H
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. C/ J/ FF
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp. D/ K
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp. D/ K
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. G
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. B/ H
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. C/ J/ FF
I
C
= 50 mA,
V
CE
= 1 V,
h
FE
-grp. D/ K
h
FE
20
20
40
100
120
180
140
200
300
460
170
250
350
500
-
-
-
-
-
-
-
I
EBO
I
CBO
-
-
-
-
-
-
-
-
-
-
0.02
0.02
20
20
20
nA
µA
V
(BR)EBO
V
(BR)CBO
32
45
6
-
-
-
-
-
-
32
45
-
-
-
-
-
-
220
310
460
630
-
-
-
-
250
380
50
70
90
100
3
2007-04-20
BCW60, BCX70
DC Electrical Characteristics
Parameter
Characteristics
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter voltage
1)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
1
Pulse
Symbol
min.
V
CEsat
-
-
V
BEsat
-
-
V
BE(ON)
-
0.58
-
Values
typ.
max.
Unit
V
0.12
0.2
0.7
0.83
0.52
0.65
0.78
0.25
0.55
0.85
1.05
-
0.7
-
test: t < 300µs; D < 2%
4
2007-04-20
BCW60, BCX70
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J /FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B /H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. D/ K
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. B/ H
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp. C/ J/ FF
I
C
= 2 mA,
V
CE = 5 V, f = 1 kHz,
h
FE
-grp. D/ K
Noise figure
I
C
= 200 µA,
V
CE = 5 V, f = 1 kHz,
D
f
= 200 Hz,
R
S
= 2 kΩ,
h
FE
-grp. B - K
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ,
h
FE
-grp. FF
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10...50 Hz ,
h
FE
-grp. FF
V
n
-
-
1
-
2
0.135 µV
F
-
2
-
h
22e
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
µS
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
-
h
11e
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
10
-4
kΩ
C
eb
-
9
-
f
T
C
cb
-
-
250
0.95
-
-
MHz
pF
-
-
-
-
18
24
30
50
-
-
-
-
dB
5
2007-04-20
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
