DF
N1
0
BC847QAPN
19 July 2013
10B
-6
45 V, 100 mA NPN/PNP general-purpose transistor
Product data sheet
1. General description
NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Low package height of 0.37 mm
3. Applications
•
•
General-purpose switching and amplification
Mobile applications
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter
voltage
collector current
Conditions
open base
Min
-
-
Typ
-
-
Max
45
100
Unit
V
mA
Per transistor; for the PNP transistor with negative polarity
Per transistor; for the PNP transistor with negative polarity
DC current gain
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C
200
-
450
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
collector TR1
collector TR2
1
2
3
8
7
6
5
4
TR1
TR2
Simplified outline
Graphic symbol
C1
B2
E2
E1
B1
sym139
C2
Transparent top view
DFN1010B-6 (SOT1216)
6. Ordering information
Table 3.
Ordering information
Package
Name
BC847QAPN
DFN1010B-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1216
Type number
7. Marking
Table 4.
Marking codes
Marking code
01 00 00
READING
DIRECTION
Type number
BC847QAPN
MARKING CODE
(EXAMPLE)
MARK-FREE AREA
PIN 1
INDICATION MARK
READING EXAMPLE:
11
01
10
VENDOR CODE
YEAR DATE
CODE
aaa-007665
Fig. 1.
BC847QAPN
DFN1010B-6 (SOT1216) binary marking code description
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
2 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
50
45
6
100
200
100
230
Unit
V
V
V
mA
mA
mA
mW
Per transistor; for the PNP transistor with negative polarity
single pulse; t
p
≤ 1 ms
-
-
T
amb
≤ 25 °C
T
amb
≤ 25 °C
[1]
-
[1]
-
-
-55
-65
350
150
150
150
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P
tot
(mW)
300
aaa-007377
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig. 2.
Per device: Power derating curve
BC847QAPN
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
3 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
9. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to
ambient
[1]
10
3
Z
th(j-a)
(K/W)
10
2
0.1
0.05
10
0.02
0.01
Thermal characteristics
Parameter
Conditions
in free air
[1]
Min
-
Typ
-
Max
543
Unit
K/W
Per device
R
th(j-a)
in free air
[1]
-
-
357
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-007378
duty cycle =
0.75
0.33
0.2
1
0.5
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847QAPN
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
4 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
10. Characteristics
Table 7.
Symbol
I
CBO
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
V
CB
= 30 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= 30 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C
I
C
= 100 mA; I
B
= 5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
V
BEsat
base-emitter saturation I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C
voltage
I
C
= 100 mA; I
B
= 5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
V
BE
base-emitter voltage
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 10 mA; T
amb
= 25 °C
C
c
f
T
NF
TR1 (NPN)
C
e
TR2 (PNP)
C
e
emitter capacitance
V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
10
-
pF
emitter capacitance
V
EB
= 0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
11
-
pF
collector capacitance
transition frequency
noise figure
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
V
CE
= 5 V; I
C
= 0.2 mA; R
S
= 2 kΩ;
f = 1 MHz; B = 200 Hz; T
amb
= 25 °C
-
-
10
dB
100
-
-
MHz
600
-
-
660
710
-
725
820
4
mV
mV
pF
-
-
760
900
-
-
mV
mV
Min
-
-
-
200
-
-
Typ
-
-
-
-
-
-
Max
15
5
100
450
100
300
mV
mV
Unit
nA
µA
nA
Per transistor; for the PNP transistor with negative polarity
I
EBO
h
FE
V
CEsat
BC847QAPN
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
5 / 14
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
